Fang, Y., Wang, F., Wang, R., Zhai, T., & Huang, F. (2021). 2D NbOI2: A Chiral Semiconductor with Highly In-Plane Anisotropic Electrical and Optical Properties. Advanced materials (Deerfield Beach, Fla.), 33(29), . https://doi.org/10.1002/adma.202101505
Style de citation ChicagoFang, Yuqiang, Fakun Wang, Ruiqi Wang, Tianyou Zhai, et Fuqiang Huang. "2D NbOI2: A Chiral Semiconductor with Highly In-Plane Anisotropic Electrical and Optical Properties." Advanced Materials (Deerfield Beach, Fla.) 33, no. 29 (2021). https://dx.doi.org/10.1002/adma.202101505.
Style de citation MLAFang, Yuqiang, et al. "2D NbOI2: A Chiral Semiconductor with Highly In-Plane Anisotropic Electrical and Optical Properties." Advanced Materials (Deerfield Beach, Fla.), vol. 33, no. 29, 2021.