Chemical Synthesis and Integration of Highly Conductive PdTe2  with Low-Dimensional Semiconductors for p-Type Transistors with Low Contact Barriers

Chemical Synthesis and Integration of Highly Conductive PdTe2  with Low-Dimensional Semiconductors for p-Type Transistors with Low Contact Barriers

© 2021 Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 33(2021), 27 vom: 05. Juli, Seite e2101150
1. Verfasser: Zheng, Jingying (VerfasserIn)
Weitere Verfasser: Miao, Tingting, Xu, Rui, Ping, Xiaofan, Wu, Yueyang, Lu, Zhixing, Zhang, Ziming, Hu, Dake, Liu, Lina, Zhang, Qi, Li, Dawei, Cheng, Zhihai, Ma, Weigang, Xie, Liming, Jiao, Liying
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2021
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article 2D crystals PdTe2 chemical integration field-effect transistors
Beschreibung
Zusammenfassung:© 2021 Wiley-VCH GmbH.
Low-dimensional semiconductors provide promising ultrathin channels for constructing more-than-Moore devices. However, the prominent contact barriers at the semiconductor-metal electrodes interfaces greatly limit the performance of the obtained devices. Here, a chemical approach is developed for the construction of p-type field-effect transistors (FETs) with low contact barriers by achieving the simultaneous synthesis and integration of 2D PdTe2 with various low-dimensional semiconductors. The 2D PdTe2 synthesized through a quasi-liquid process exhibits high electrical conductivity (≈4.3 × 106 S m-1 ) and thermal conductivity (≈130 W m-1 K-1 ), superior to other transition metal dichalcogenides (TMDCs) and even higher than some metals. In addition, PdTe2 electrodes with desired geometry can be synthesized directly on 2D MoTe2 and other semiconductors to form high-performance p-type FETs without any further treatment. The chemically derived atomically ordered PdTe2 -MoTe2 interface results in significantly reduced contact barrier (65 vs 240 meV) and thus increases the performance of the obtained devices. This work demonstrates the great potential of 2D PdTe2 as contact materials and also opens up a new avenue for the future device fabrication through the chemical construction and integration of 2D components
Beschreibung:Date Revised 08.07.2021
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.202101150