Self-Powered MXene/GaN van der Waals Heterojunction Ultraviolet Photodiodes with Superhigh Efficiency and Stable Current Outputs
© 2021 Wiley-VCH GmbH.
| Publié dans: | Advanced materials (Deerfield Beach, Fla.). - 1998. - 33(2021), 27 vom: 30. Juli, Seite e2101059 |
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| Auteur principal: | |
| Autres auteurs: | , , |
| Format: | Article en ligne |
| Langue: | English |
| Publié: |
2021
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| Accès à la collection: | Advanced materials (Deerfield Beach, Fla.) |
| Sujets: | Journal Article MXene/GaN self-powered devices ultraviolet photodiodes van der Waals heterojunctions |
| Résumé: | © 2021 Wiley-VCH GmbH. A self-powered, high-performance Ti3 C2 Tx MXene/GaN van der Waals heterojunction (vdWH)-based ultraviolet (UV) photodiode is reported. Such integration creates a Schottky junction depth that is larger than the UV absorption depth to sufficiently separate the photoinduced electron/hole pairs, boosting the peak internal quantum efficiency over the unity and the external quantum efficiency over 99% under weak UV light without bias. The proposed Ti3 C2 Tx /GaN vdWH UV photodiode demonstrates pronounced photoelectric performances working in self-powered mode, including a large responsivity (284 mA W-1 ), a high specific detectivity (7.06 × 1013 Jones), and fast response speed (rise/decay time of 7.55 µs/1.67 ms). Furthermore, the remarkable photovoltaic behavior leads to an impressive power conversion efficiency of 7.33% under 355 nm UV light illumination. Additionally, this work presents an easy-processing spray-deposition route for the fabrication of large-area UV photodiode arrays that exhibit highly uniform cell-to-cell performance. The MXene/GaN photodiode arrays with high-efficiency and self-powered ability show high potential for many applications, such as energy-saving communication, imaging, and sensing networks |
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| Description: | Date Revised 08.07.2021 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
| ISSN: | 1521-4095 |
| DOI: | 10.1002/adma.202101059 |