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231225s2021 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202007862
|2 doi
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|a pubmed24n1086.xml
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|a (DE-627)NLM325815089
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|a (NLM)34032320
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Tai, Chia-Tse
|e verfasserin
|4 aut
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|a Strain Effects on Rashba Spin-Orbit Coupling of 2D Hole Gases in GeSn/Ge Heterostructures
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|c 2021
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 02.07.2021
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2021 Wiley-VCH GmbH.
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|a A demonstration of 2D hole gases in GeSn/Ge heterostructures with a mobility as high as 20 000 cm2 V-1 s-1 is given. Both the Shubnikov-de Haas oscillations and integer quantum Hall effect are observed, indicating high sample quality. The Rashba spin-orbit coupling (SOC) is investigated via magneto-transport. Further, a transition from weak localization to weak anti-localization is observed, which shows the tunability of the SOC strength by gating. The magneto-transport data are fitted to the Hikami-Larkin-Nagaoka formula. The phase-coherence and spin-relaxation times, as well as spin-splitting energy and Rashba coefficient of the k-cubic term, are extracted. The analysis reveals that the effects of strain and confinement potential at a high fraction of Sn suppress the Rashba SOC caused by the GeSn/Ge heterostructures
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|a Journal Article
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|a Rashba spin-orbit coupling
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|a heterostructures
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|a spintronics
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|a weak anti-localization
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|a Chiu, Po-Yuan
|e verfasserin
|4 aut
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|a Liu, Chia-You
|e verfasserin
|4 aut
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|a Kao, Hsiang-Shun
|e verfasserin
|4 aut
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|a Harris, C Thomas
|e verfasserin
|4 aut
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1 |
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|a Lu, Tzu-Ming
|e verfasserin
|4 aut
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1 |
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|a Hsieh, Chi-Ti
|e verfasserin
|4 aut
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|a Chang, Shu-Wei
|e verfasserin
|4 aut
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|a Li, Jiun-Yun
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 33(2021), 26 vom: 26. Juli, Seite e2007862
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:33
|g year:2021
|g number:26
|g day:26
|g month:07
|g pages:e2007862
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|u http://dx.doi.org/10.1002/adma.202007862
|3 Volltext
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