Novel Spin-Orbit Torque Generation at Room Temperature in an All-Oxide Epitaxial La0.7 Sr0.3 MnO3 /SrIrO3 System

© 2021 Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 33(2021), 24 vom: 14. Juni, Seite e2008269
1. Verfasser: Huang, Xiaoxi (VerfasserIn)
Weitere Verfasser: Sayed, Shehrin, Mittelstaedt, Joseph, Susarla, Sandhya, Karimeddiny, Saba, Caretta, Lucas, Zhang, Hongrui, Stoica, Vladimir A, Gosavi, Tanay, Mahfouzi, Farzad, Sun, Qilong, Ercius, Peter, Kioussis, Nicholas, Salahuddin, Sayeef, Ralph, Daniel C, Ramesh, Ramamoorthy
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2021
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article complex oxides effective magnetization spin-orbit coupling spin-orbit torque efficiency, spintronics
Beschreibung
Zusammenfassung:© 2021 Wiley-VCH GmbH.
Spin-orbit torques (SOTs) that arise from materials with large spin-orbit coupling offer a new pathway for energy-efficient and fast magnetic information storage. SOTs in conventional heavy metals and topological insulators are explored extensively, while 5d transition metal oxides, which also host ions with strong spin-orbit coupling, are a relatively new territory in the field of spintronics. An all-oxide, SrTiO3 (STO)//La0.7 Sr0.3 MnO3 (LSMO)/SrIrO3 (SIO) heterostructure with lattice-matched crystal structure is synthesized, exhibiting an epitaxial and atomically sharp interface between the ferromagnetic LSMO and the high spin-orbit-coupled metal SIO. Spin-torque ferromagnetic resonance (ST-FMR) is used to probe the effective magnetization and the SOT efficiency in LSMO/SIO heterostructures grown on STO substrates. Remarkably, epitaxial LSMO/SIO exhibits a large SOT efficiency, ξ||  = 1, while retaining a reasonably low shunting factor and increasing the effective magnetization of LSMO by ≈50%. The findings highlight the significance of epitaxy as a powerful tool to achieve a high SOT efficiency, explore the rich physics at the epitaxial interface, and open up a new pathway for designing next-generation energy-efficient spintronic devices
Beschreibung:Date Revised 21.06.2021
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.202008269