Large Fermi-Energy Shift and Suppression of Trivial Surface States in NbP Weyl Semimetal Thin Films

Large Fermi-Energy Shift and Suppression of Trivial Surface States in NbP Weyl Semimetal Thin Films

© 2021 The Authors. Advanced Materials published by Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 33(2021), 21 vom: 06. Mai, Seite e2008634
1. Verfasser: Bedoya-Pinto, Amilcar (VerfasserIn)
Weitere Verfasser: Liu, Defa, Tan, Hengxin, Pandeya, Avanindra Kumar, Chang, Kai, Zhang, Jibo, Parkin, Stuart S P
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2021
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Fermi arcs Fermi-level engineering Weyl semimetal thin films topological surface states
Beschreibung
Zusammenfassung:© 2021 The Authors. Advanced Materials published by Wiley-VCH GmbH.
Weyl semimetals, a class of 3D topological materials, exhibit a unique electronic structure featuring linear band crossings and disjoint surface states (Fermi-arcs). While first demonstrations of topologically driven phenomena have been realized in bulk crystals, efficient routes to control the electronic structure have remained largely unexplored. Here, a dramatic modification of the electronic structure in epitaxially grown NbP Weyl semimetal thin films is reported, using in situ surface engineering and chemical doping strategies that do not alter the NbP lattice structure and symmetry, retaining its topological nature. Through the preparation of a dangling-bond-free, P-terminated surface which manifests in a surface reconstruction, all the well-known trivial surface states of NbP are fully suppressed, resulting in a purely topological Fermi-arc dispersion. In addition, a substantial Fermi-energy shift from -0.2 to 0.3 eV across the Weyl points is achieved by surface chemical doping, unlocking access to the hitherto unexplored n-type region of the Weyl spectrum. These findings constitute a milestone toward surface-state and Fermi-level engineering of topological bands in Weyl semimetals, and, while there are still challenges in minimizing doping-driven disorder and grain boundary density in the films, they do represent a major advance to realize device heterostructures based on Weyl physics
Beschreibung:Date Revised 13.10.2024
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.202008634