Giant Ferroelectric Resistance Switching Controlled by a Modulatory Terminal for Low-Power Neuromorphic In-Memory Computing

Giant Ferroelectric Resistance Switching Controlled by a Modulatory Terminal for Low-Power Neuromorphic In-Memory Computing

© 2021 Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 33(2021), 21 vom: 12. Mai, Seite e2008709
1. Verfasser: Xue, Fei (VerfasserIn)
Weitere Verfasser: He, Xin, Wang, Zhenyu, Retamal, José Ramón Durán, Chai, Zheng, Jing, Lingling, Zhang, Chenhui, Fang, Hui, Chai, Yang, Jiang, Tao, Zhang, Weidong, Alshareef, Husam N, Ji, Zhigang, Li, Lain-Jong, He, Jr-Hau, Zhang, Xixiang
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2021
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article heterosynaptic plasticity in-memory computing neuromorphic computing van der Waals ferroelectric
Beschreibung
Zusammenfassung:© 2021 Wiley-VCH GmbH.
Ferroelectrics have been demonstrated as excellent building blocks for high-performance nonvolatile memories, including memristors, which play critical roles in the hardware implementation of artificial synapses and in-memory computing. Here, it is reported that the emerging van der Waals ferroelectric α-In2 Se3 can be used to successfully implement heterosynaptic plasticity (a fundamental but rarely emulated synaptic form) and achieve a resistance-switching ratio of heterosynaptic memristors above 103 , which is two orders of magnitude larger than that in other similar devices. The polarization change of ferroelectric α-In2 Se3 channel is responsible for the resistance switching at various paired terminals. The third terminal of α-In2 Se3 memristors exhibits nonvolatile control over channel current at a picoampere level, endowing the devices with picojoule read-energy consumption to emulate the associative heterosynaptic learning. The simulation proves that both supervised and unsupervised learning manners can be implemented in α-In2 Se3 neutral networks with high image recognition accuracy. Moreover, these heterosynaptic devices can naturally realize Boolean logic without an additional circuit component. The results suggest that van der Waals ferroelectrics hold great potential for applications in complex, energy-efficient, brain-inspired computing systems and logic-in-memory computers
Beschreibung:Date Revised 27.05.2021
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.202008709