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231225s2021 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202007169
|2 doi
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|a pubmed25n1078.xml
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|a DE-627
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|a eng
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|a Chu, Zema
|e verfasserin
|4 aut
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|a Perovskite Light-Emitting Diodes with External Quantum Efficiency Exceeding 22% via Small-Molecule Passivation
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|c 2021
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|a ƒa Online-Ressource
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|a Date Revised 05.05.2021
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2021 Wiley-VCH GmbH.
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|a Perovskite light-emitting diodes (PeLEDs) are considered as particularly attractive candidates for high-quality lighting and displays, due to possessing the features of wide gamut and real color expression. However, most PeLEDs are made from polycrystalline perovskite films that contain a high concentration of defects, including point and extended imperfections. Reducing and mitigating non-radiative recombination defects in perovskite materials are still crucial prerequisites for achieving high performance in light-emitting applications. Here, ethoxylated trimethylolpropane triacrylate (ETPTA) is introduced as a functional additive dissolved in antisolvent to passivate surface and bulk defects during the spinning process. The ETPTA can effectively decrease the charge trapping states by passivation and/or suppression of defects. Eventually, the perovskite films that are sufficiently passivated by ETPTA make the devices achieve a maximum external quantum efficiency (EQE) of 22.49%. To our knowledge, these are the most efficient green PeLEDs up to now. In addition, a threefold increase in the T50 operational time of the devices was observed, compared to control samples. These findings provide a simple and effective strategy to make highly efficient perovskite polycrystalline films and their optoelectronics devices
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|a Journal Article
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|a ETPTA
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|a non-radiative recombination
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|a perovskite light-emitting diodes
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|a Ye, Qiufeng
|e verfasserin
|4 aut
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|a Zhao, Yang
|e verfasserin
|4 aut
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|a Ma, Fei
|e verfasserin
|4 aut
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|a Yin, Zhigang
|e verfasserin
|4 aut
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|a Zhang, Xingwang
|e verfasserin
|4 aut
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|a You, Jingbi
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 33(2021), 18 vom: 14. Mai, Seite e2007169
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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|g volume:33
|g year:2021
|g number:18
|g day:14
|g month:05
|g pages:e2007169
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|u http://dx.doi.org/10.1002/adma.202007169
|3 Volltext
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