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231225s2021 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202007724
|2 doi
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|a pubmed24n1078.xml
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|a (DE-627)NLM323477186
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|a (NLM)33792077
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Karthik, Durai
|e verfasserin
|4 aut
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|a Acceptor-Donor-Acceptor-Type Orange-Red Thermally Activated Delayed Fluorescence Materials Realizing External Quantum Efficiency Over 30% with Low Efficiency Roll-Off
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|c 2021
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 05.05.2021
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2021 Wiley-VCH GmbH.
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|a Two new orange-red thermally activated delayed fluorescence (TADF) materials, PzTDBA and PzDBA, are reported. These materials are designed based on the acceptor-donor-acceptor (A-D-A) configuration, containing rigid boron acceptors and dihydrophenazine donor moieties. These materials exhibit a small ΔEST of 0.05-0.06 eV, photoluminescence quantum yield (PLQY) as high as near unity, and short delayed exciton lifetime (τd ) of less than 2.63 µs in 5 wt% doped film. Further, these materials show a high reverse intersystem crossing rate (krisc ) on the order of 106 s-1 . The TADF devices fabricated with 5 wt% PzTDBA and PzDBA as emitting dopants show maximum EQE of 30.3% and 21.8% with extremely low roll-off of 3.6% and 3.2% at 1000 cd m-2 and electroluminescence (EL) maxima at 576 nm and 595 nm, respectively. The low roll-off character of these materials is analyzed by using a roll-off model and the exciton annihilation quenching rates are found to be suppressed by the fast krisc and short delayed exciton lifetime. These devices show operating device lifetimes (LT50 ) of 159 and 193 h at 1000 cd m-2 for PzTDBA and PzDBA, respectively. The high efficiency and low roll-off of these materials are attributed to the good electronic properties originatng from the A-D-A molecular configuration
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|a Journal Article
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|a acceptor-donor-acceptor structures
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|a boron acceptors
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|a efficiency roll-off
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|a orange-red organic light-emitting diodes
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|a thermally activated delayed fluorescence
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|a Jung, Young Hun
|e verfasserin
|4 aut
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|a Lee, Hyuna
|e verfasserin
|4 aut
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|a Hwang, Soonjae
|e verfasserin
|4 aut
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|a Seo, Bo-Min
|e verfasserin
|4 aut
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|a Kim, Jun-Yun
|e verfasserin
|4 aut
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|a Han, Chang Wook
|e verfasserin
|4 aut
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| 700 |
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|a Kwon, Jang Hyuk
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 33(2021), 18 vom: 15. Mai, Seite e2007724
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:33
|g year:2021
|g number:18
|g day:15
|g month:05
|g pages:e2007724
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|u http://dx.doi.org/10.1002/adma.202007724
|3 Volltext
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|d 33
|j 2021
|e 18
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|h e2007724
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