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231225s2021 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202005886
|2 doi
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|a pubmed24n1075.xml
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|a (DE-627)NLM322624851
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|a (NLM)33705580
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|a DE-627
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|e rakwb
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|a eng
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|a Larin, Artem O
|e verfasserin
|4 aut
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|a Luminescent Erbium-Doped Silicon Thin Films for Advanced Anti-Counterfeit Labels
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|c 2021
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Completed 22.04.2021
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|a Date Revised 22.04.2021
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2021 Wiley-VCH GmbH.
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|a The never-ending struggle against counterfeit demands the constant development of security labels and their fabrication methods. This study demonstrates a novel type of security label based on downconversion photoluminescence from erbium-doped silicon. For fabrication of these labels, a femtosecond laser is applied to selectively irradiate a double-layered Er/Si thin film, which is accomplished by Er incorporation into a silicon matrix and silicon-layer crystallization. The study of laser-induced heating demonstrates that it creates optically active erbium centers in silicon, providing stable and enhanced photoluminescence at 1530 nm. Such a technique is utilized to create two types of anti-counterfeiting labels. The first type is realized by the single-step direct laser writing of luminescent areas and detected by optical microscopy as holes in the film forming the desired image. The second type, with a higher degree of security, is realized by adding other fabrication steps, including the chemical etching of the Er layer and laser writing of additional non-luminescent holes over an initially recorded image. During laser excitation at 525 nm of luminescent holes of the labels, a photoluminescent picture repeating desired data can be seen. The proposed labels are easily scalable and perspective for labeling of goods, securities, and luxury items
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|a Journal Article
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|a erbium-doped silicon
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|a laser-assisted fabrication
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|a optical security labels
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|a photoluminescence
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|a Dvoretckaia, Liliia N
|e verfasserin
|4 aut
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1 |
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|a Mozharov, Alexey M
|e verfasserin
|4 aut
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1 |
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|a Mukhin, Ivan S
|e verfasserin
|4 aut
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1 |
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|a Cherepakhin, Artem B
|e verfasserin
|4 aut
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1 |
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|a Shishkin, Ivan I
|e verfasserin
|4 aut
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|a Ageev, Eduard I
|e verfasserin
|4 aut
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|a Zuev, Dmitry A
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 33(2021), 16 vom: 11. Apr., Seite e2005886
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:33
|g year:2021
|g number:16
|g day:11
|g month:04
|g pages:e2005886
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|u http://dx.doi.org/10.1002/adma.202005886
|3 Volltext
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