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231225s2021 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202006957
|2 doi
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|a pubmed24n1566.xml
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|a eng
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|a Sorgenfrei, Nomi L A N
|e verfasserin
|4 aut
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|a Photodriven Transient Picosecond Top-Layer Semiconductor to Metal Phase-Transition in p-Doped Molybdenum Disulfide
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|c 2021
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Revised 13.10.2024
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2021 The Authors. Advanced Materials published by Wiley-VCH GmbH.
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|a Visible light is shown to create a transient metallic S-Mo-S surface layer on bulk semiconducting p-doped indirect-bandgap 2H-MoS2 . Optically created electron-hole pairs separate in the surface band bending region of the p-doped semiconducting crystal causing a transient accumulation of electrons in the surface region. This triggers a reversible 2H-semiconductor to 1T-metal phase-transition of the surface layer. Electron-phonon coupling of the indirect-bandgap p-doped 2H-MoS2 enables this efficient pathway even at a low density of excited electrons with a distinct optical excitation threshold and saturation behavior. This mechanism needs to be taken into consideration when describing the surface properties of illuminated p-doped 2H-MoS2 . In particular, light-induced increased charge mobility and surface activation can cause and enhance the photocatalytic and photoassisted electrochemical hydrogen evolution reaction of water on 2H-MoS2 . Generally, it opens up for a way to control not only the surface of p-doped 2H-MoS2 but also related dichalcogenides and layered systems. The findings are based on the sensitivity of time-resolved electron spectroscopy for chemical analysis with photon-energy-tuneable synchrotron radiation
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|a Journal Article
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|a catalysis
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|a dichalcogenides
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|a hydrogen evolution reaction
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|a phase transitions
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|a photoelectron spectroscopy
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|a Giangrisostomi, Erika
|e verfasserin
|4 aut
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|a Jay, Raphael M
|e verfasserin
|4 aut
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|a Kühn, Danilo
|e verfasserin
|4 aut
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|a Neppl, Stefan
|e verfasserin
|4 aut
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|a Ovsyannikov, Ruslan
|e verfasserin
|4 aut
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|a Sezen, Hikmet
|e verfasserin
|4 aut
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|a Svensson, Svante
|e verfasserin
|4 aut
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|a Föhlisch, Alexander
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 33(2021), 14 vom: 04. Apr., Seite e2006957
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:33
|g year:2021
|g number:14
|g day:04
|g month:04
|g pages:e2006957
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|u http://dx.doi.org/10.1002/adma.202006957
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