Perovskite Light-Emitting Diodes with Near Unit Internal Quantum Efficiency at Low Temperatures

Perovskite Light-Emitting Diodes with Near Unit Internal Quantum Efficiency at Low Temperatures

© 2021 Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 33(2021), 14 vom: 26. Apr., Seite e2006302
1. Verfasser: He, Yarong (VerfasserIn)
Weitere Verfasser: Yan, Jiaxu, Xu, Lei, Zhang, Bangmin, Cheng, Qian, Cao, Yu, Zhang, Ju, Tao, Cong, Wei, Yingqiang, Wen, Kaichuan, Kuang, Zhiyuan, Chow, Gan Moog, Shen, Zexiang, Peng, Qiming, Huang, Wei, Wang, Jianpu
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2021
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article high efficiency high stability low temperature perovskite light-emitting diodes
Beschreibung
Zusammenfassung:© 2021 Wiley-VCH GmbH.
Room-temperature-high-efficiency light-emitting diodes based on metal halide perovskite FAPbI3 are shown to be able to work perfectly at low temperatures. A peak external quantum efficiency (EQE) of 32.8%, corresponding to an internal quantum efficiency of 100%, is achieved at 45 K. Importantly, the devices show almost no degradation after working at a constant current density of 200 mA m-2 for 330 h. The enhanced EQEs at low temperatures result from the increased photoluminescence quantum efficiencies of the perovskite, which is caused by the increased radiative recombination rate. Spectroscopic and calculation results suggest that the phase transitions of the FAPbI3 play an important role for the enhancement of exciton binding energy, which increases the recombination rate
Beschreibung:Date Revised 08.04.2021
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.202006302