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231225s2021 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202007819
|2 doi
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|a pubmed24n1072.xml
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|a (DE-627)NLM321637135
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|a (NLM)33604926
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Lin, Yung-Chang
|e verfasserin
|4 aut
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|a Formation of Highly Doped Nanostripes in 2D Transition Metal Dichalcogenides via a Dislocation Climb Mechanism
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|c 2021
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 24.03.2021
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2021 Wiley-VCH GmbH.
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|a Doping of materials beyond the dopant solubility limit remains a challenge, especially when spatially nonuniform doping is required. In 2D materials with a high surface-to-volume ratio, such as transition metal dichalcogenides, various post-synthesis approaches to doping have been demonstrated, but full control over spatial distribution of dopants remains a challenge. A post-growth doping of single layers of WSe2 is performed by adding transition metal (TM) atoms in a two-step process, which includes annealing followed by deposition of dopants together with Se or S. The Ti, V, Cr, and Fe impurities at W sites are identified by using transmission electron microscopy and electron energy loss spectroscopy. Remarkably, an extremely high density (6.4-15%) of various types of impurity atoms is achieved. The dopants are revealed to be largely confined within nanostripes embedded in the otherwise pristine WSe2 . Density functional theory calculations show that the dislocations assist the incorporation of the dopant during their climb and give rise to stripes of TM dopant atoms. This work demonstrates a possible spatially controllable doping strategy to achieve the desired local electronic, magnetic, and optical properties in 2D materials
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|a Journal Article
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|a dislocation migration
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|a doping
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|a nanostripes
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|a transition metal dichalcogenides
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|a Karthikeyan, Jeyakumar
|e verfasserin
|4 aut
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|a Chang, Yao-Pang
|e verfasserin
|4 aut
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|a Li, Shisheng
|e verfasserin
|4 aut
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|a Kretschmer, Silvan
|e verfasserin
|4 aut
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|a Komsa, Hannu-Pekka
|e verfasserin
|4 aut
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|a Chiu, Po-Wen
|e verfasserin
|4 aut
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|a Krasheninnikov, Arkady V
|e verfasserin
|4 aut
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|a Suenaga, Kazu
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 33(2021), 12 vom: 03. März, Seite e2007819
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:33
|g year:2021
|g number:12
|g day:03
|g month:03
|g pages:e2007819
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|u http://dx.doi.org/10.1002/adma.202007819
|3 Volltext
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