Progress in Epitaxial Thin-Film Na3 Bi as a Topological Electronic Material

© 2021 Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 33(2021), 11 vom: 19. März, Seite e2005897
1. Verfasser: Di Bernardo, Iolanda (VerfasserIn)
Weitere Verfasser: Hellerstedt, Jack, Liu, Chang, Akhgar, Golrokh, Wu, Weikang, Yang, Shengyuan A, Culcer, Dimitrie, Mo, Sung-Kwan, Adam, Shaffique, Edmonds, Mark T, Fuhrer, Michael S
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2021
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article Review Na3Bi magnetotransport molecular beam epitaxy thin films topological Dirac semimetals
Beschreibung
Zusammenfassung:© 2021 Wiley-VCH GmbH.
Trisodium bismuthide (Na3 Bi) is the first experimentally verified topological Dirac semimetal, and is a 3D analogue of graphene hosting relativistic Dirac fermions. Its unconventional momentum-energy relationship is interesting from a fundamental perspective, yielding exciting physical properties such as chiral charge carriers, the chiral anomaly, and weak anti-localization. It also shows promise for realizing topological electronic devices such as topological transistors. Herein, an overview of the substantial progress achieved in the last few years on Na3 Bi is presented, with a focus on technologically relevant large-area thin films synthesized via molecular beam epitaxy. Key theoretical aspects underpinning the unique electronic properties of Na3 Bi are introduced. Next, the growth process on different substrates is reviewed. Spectroscopic and microscopic features are illustrated, and an analysis of semiclassical and quantum transport phenomena in different doping regimes is provided. The emergent properties arising from confinement in two dimensions, including thickness-dependent and electric-field-driven topological phase transitions, are addressed, with an outlook toward current challenges and expected future progress
Beschreibung:Date Revised 17.03.2021
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.202005897