Epitaxial Ferroelectric Hf0.5 Zr0.5 O2 with Metallic Pyrochlore Oxide Electrodes

© 2021 Wiley-VCH GmbH.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 33(2021), 10 vom: 06. März, Seite e2006089
1. Verfasser: Zhang, Zimeng (VerfasserIn)
Weitere Verfasser: Hsu, Shang-Lin, Stoica, Vladimir A, Paik, Hanjong, Parsonnet, Eric, Qualls, Alexander, Wang, Jianjun, Xie, Liang, Kumari, Mukesh, Das, Sujit, Leng, Zhinan, McBriarty, Martin, Proksch, Roger, Gruverman, Alexei, Schlom, Darrell G, Chen, Long-Qing, Salahuddin, Sayeef, Martin, Lane W, Ramesh, Ramamoorthy
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2021
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article epitaxial growth ferroelectrics hafnia
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520 |a The synthesis of fully epitaxial ferroelectric Hf0.5 Zr0.5 O2 (HZO) thin films through the use of a conducting pyrochlore oxide electrode that acts as a structural and chemical template is reported. Such pyrochlores, exemplified by Pb2 Ir2 O7 (PIO) and Bi2 Ru2 O7 (BRO), exhibit metallic conductivity with room-temperature resistivity of <1 mΩ cm and are closely lattice matched to yttria-stabilized zirconia substrates as well as the HZO layers grown on top of them. Evidence for epitaxy and domain formation is established with X-ray diffraction and scanning transmission electron microscopy, which show that the c-axis of the HZO film is normal to the substrate surface. The emergence of the non-polar-monoclinic phase from the polar-orthorhombic phase is observed when the HZO film thickness is ≥≈30 nm. Thermodynamic analyses reveal the role of epitaxial strain and surface energy in stabilizing the polar phase as well as its coexistence with the non-polar-monoclinic phase as a function of film thickness 
650 4 |a Journal Article 
650 4 |a epitaxial growth 
650 4 |a ferroelectrics 
650 4 |a hafnia 
700 1 |a Hsu, Shang-Lin  |e verfasserin  |4 aut 
700 1 |a Stoica, Vladimir A  |e verfasserin  |4 aut 
700 1 |a Paik, Hanjong  |e verfasserin  |4 aut 
700 1 |a Parsonnet, Eric  |e verfasserin  |4 aut 
700 1 |a Qualls, Alexander  |e verfasserin  |4 aut 
700 1 |a Wang, Jianjun  |e verfasserin  |4 aut 
700 1 |a Xie, Liang  |e verfasserin  |4 aut 
700 1 |a Kumari, Mukesh  |e verfasserin  |4 aut 
700 1 |a Das, Sujit  |e verfasserin  |4 aut 
700 1 |a Leng, Zhinan  |e verfasserin  |4 aut 
700 1 |a McBriarty, Martin  |e verfasserin  |4 aut 
700 1 |a Proksch, Roger  |e verfasserin  |4 aut 
700 1 |a Gruverman, Alexei  |e verfasserin  |4 aut 
700 1 |a Schlom, Darrell G  |e verfasserin  |4 aut 
700 1 |a Chen, Long-Qing  |e verfasserin  |4 aut 
700 1 |a Salahuddin, Sayeef  |e verfasserin  |4 aut 
700 1 |a Martin, Lane W  |e verfasserin  |4 aut 
700 1 |a Ramesh, Ramamoorthy  |e verfasserin  |4 aut 
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