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|a 10.1002/adma.202006089
|2 doi
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|a pubmed24n1069.xml
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|a (DE-627)NLM320939545
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|a (NLM)33533113
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Zhang, Zimeng
|e verfasserin
|4 aut
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|a Epitaxial Ferroelectric Hf0.5 Zr0.5 O2 with Metallic Pyrochlore Oxide Electrodes
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|c 2021
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 01.12.2021
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|a published: Print-Electronic
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|a ErratumIn: Adv Mater. 2021 Dec;33(48):e2105655. - PMID 34850987
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|a Citation Status PubMed-not-MEDLINE
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|a © 2021 Wiley-VCH GmbH.
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|a The synthesis of fully epitaxial ferroelectric Hf0.5 Zr0.5 O2 (HZO) thin films through the use of a conducting pyrochlore oxide electrode that acts as a structural and chemical template is reported. Such pyrochlores, exemplified by Pb2 Ir2 O7 (PIO) and Bi2 Ru2 O7 (BRO), exhibit metallic conductivity with room-temperature resistivity of <1 mΩ cm and are closely lattice matched to yttria-stabilized zirconia substrates as well as the HZO layers grown on top of them. Evidence for epitaxy and domain formation is established with X-ray diffraction and scanning transmission electron microscopy, which show that the c-axis of the HZO film is normal to the substrate surface. The emergence of the non-polar-monoclinic phase from the polar-orthorhombic phase is observed when the HZO film thickness is ≥≈30 nm. Thermodynamic analyses reveal the role of epitaxial strain and surface energy in stabilizing the polar phase as well as its coexistence with the non-polar-monoclinic phase as a function of film thickness
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|a Journal Article
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|a epitaxial growth
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|a ferroelectrics
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|a hafnia
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|a Hsu, Shang-Lin
|e verfasserin
|4 aut
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|a Stoica, Vladimir A
|e verfasserin
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|a Paik, Hanjong
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|4 aut
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|a Parsonnet, Eric
|e verfasserin
|4 aut
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|a Qualls, Alexander
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|a Wang, Jianjun
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|4 aut
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|a Xie, Liang
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|4 aut
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|a Kumari, Mukesh
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|4 aut
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|a Das, Sujit
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|4 aut
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|a Leng, Zhinan
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|4 aut
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|a McBriarty, Martin
|e verfasserin
|4 aut
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|a Proksch, Roger
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|a Gruverman, Alexei
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|4 aut
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|a Schlom, Darrell G
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|4 aut
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|a Chen, Long-Qing
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|a Salahuddin, Sayeef
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|a Martin, Lane W
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|a Ramesh, Ramamoorthy
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 33(2021), 10 vom: 06. März, Seite e2006089
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:33
|g year:2021
|g number:10
|g day:06
|g month:03
|g pages:e2006089
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|u http://dx.doi.org/10.1002/adma.202006089
|3 Volltext
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