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231225s2021 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202004110
|2 doi
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|a pubmed24n1061.xml
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|a (DE-627)NLM318491974
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|a (NLM)33283320
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Zhang, Kaixuan
|e verfasserin
|4 aut
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| 245 |
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|a Gigantic Current Control of Coercive Field and Magnetic Memory Based on Nanometer-Thin Ferromagnetic van der Waals Fe3 GeTe2
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|c 2021
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 22.02.2021
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2020 Wiley-VCH GmbH.
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|a Controlling magnetic states by a small current is essential for the next-generation of energy-efficient spintronic devices. However, it invariably requires considerable energy to change a magnetic ground state of intrinsically quantum nature governed by fundamental Hamiltonian, once stabilized below a phase-transition temperature. Here, it is reported that, surprisingly, an in-plane current can tune the magnetic state of the nanometer-thin van der Waals ferromagnet Fe3 GeTe2 from a hard magnetic state to a soft magnetic state. It is a direct demonstration of the current-induced substantial reduction of the coercive field. This surprising finding is possible because the in-plane current produces a highly unusual type of gigantic spin-orbit torque for Fe3 GeTe2 . In addition, a working model of a new nonvolatile magnetic memory based on the principle of the discovery in Fe3 GeTe2 , controlled by a tiny current, is further demonstrated. The findings open up a new window of exciting opportunities for magnetic van der Waals materials with potentially huge impact on the future development of spintronic and magnetic memory
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|a Journal Article
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|a 2D topological ferromagnetic metal Fe3GeTe2
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|a current-tunable coercive field
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| 650 |
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|a magnetic van der Waals materials
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|a spintronic and magnetic memory
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4 |
|a unusually large spin-orbit torque
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|a Han, Seungyun
|e verfasserin
|4 aut
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|a Lee, Youjin
|e verfasserin
|4 aut
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|a Coak, Matthew J
|e verfasserin
|4 aut
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|a Kim, Junghyun
|e verfasserin
|4 aut
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|a Hwang, Inho
|e verfasserin
|4 aut
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|a Son, Suhan
|e verfasserin
|4 aut
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|a Shin, Jeacheol
|e verfasserin
|4 aut
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| 700 |
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|a Lim, Mijin
|e verfasserin
|4 aut
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| 700 |
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|a Jo, Daegeun
|e verfasserin
|4 aut
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| 700 |
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|a Kim, Kyoo
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kim, Dohun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lee, Hyun-Woo
|e verfasserin
|4 aut
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| 700 |
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|a Park, Je-Geun
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 33(2021), 4 vom: 01. Jan., Seite e2004110
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:33
|g year:2021
|g number:4
|g day:01
|g month:01
|g pages:e2004110
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| 856 |
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|u http://dx.doi.org/10.1002/adma.202004110
|3 Volltext
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