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231225s2021 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202005946
|2 doi
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|a pubmed24n1060.xml
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|a (DE-627)NLM318180693
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|a (NLM)33251668
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
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|a Lu, Yang
|e verfasserin
|4 aut
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|a Persistent Conjugated Backbone and Disordered Lamellar Packing Impart Polymers with Efficient n-Doping and High Conductivities
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|c 2021
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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| 338 |
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 12.01.2021
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2020 Wiley-VCH GmbH.
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|a Solution-processable highly conductive polymers are of great interest in emerging electronic applications. For p-doped polymers, conductivities as high a nearly 105 S cm-1 have been reported. In the case of n-doped polymers, they often fall well short of the high values noted above, which might be achievable, if much higher charge-carrier mobilities determined could be realized in combination with high charge-carrier densities. This is in part due to inefficient doping and dopant ions disturbing the ordering of polymers, limiting efficient charge transport and ultimately the achievable conductivities. Here, n-doped polymers that achieve a high conductivity of more than 90 S cm-1 by a simple solution-based co-deposition method are reported. Two conjugated polymers with rigid planar backbones, but with disordered crystalline structures, exhibit surprising structural tolerance to, and excellent miscibility with, commonly used n-dopants. These properties allow both high concentrations and high mobility of the charge carriers to be realized simultaneously in n-doped polymers, resulting in excellent electrical conductivity and thermoelectric performance
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|a Journal Article
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|a conducting polymers
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|a electrical conductivity
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|a molecular doping
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4 |
|a n-doping
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4 |
|a organic thermoelectrics
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1 |
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|a Yu, Zi-Di
|e verfasserin
|4 aut
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1 |
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|a Un, Hio-Ieng
|e verfasserin
|4 aut
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1 |
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|a Yao, Ze-Fan
|e verfasserin
|4 aut
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1 |
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|a You, Hao-Yang
|e verfasserin
|4 aut
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1 |
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|a Jin, Wenlong
|e verfasserin
|4 aut
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1 |
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|a Li, Liang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Zi-Yuan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Dong, Bo-Wei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Barlow, Stephen
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Longhi, Elena
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Di, Chong-An
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhu, Daoben
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Jie-Yu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Silva, Carlos
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Marder, Seth R
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Pei, Jian
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 33(2021), 2 vom: 01. Jan., Seite e2005946
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:33
|g year:2021
|g number:2
|g day:01
|g month:01
|g pages:e2005946
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| 856 |
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|u http://dx.doi.org/10.1002/adma.202005946
|3 Volltext
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|a AR
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|d 33
|j 2021
|e 2
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|c 01
|h e2005946
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