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231225s2020 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202003746
|2 doi
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|a pubmed24n1052.xml
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|a (DE-627)NLM315726741
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|a (NLM)33002238
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|a DE-627
|b ger
|c DE-627
|e rakwb
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| 041 |
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|a eng
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| 100 |
1 |
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|a Chen, Yu
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Visualizing the Anomalous Charge Density Wave States in Graphene/NbSe2 Heterostructures
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|c 2020
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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| 338 |
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 10.11.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2020 Wiley-VCH GmbH.
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|a Metallic layered transition metal dichalcogenides (TMDs) host collective many-body interactions, including the competing superconducting and charge density wave (CDW) states. Graphene is widely employed as a heteroepitaxial substrate for the growth of TMD layers and as an ohmic contact, where the graphene/TMD heterostructure is naturally formed. The presence of graphene can unpredictably influence the CDW order in 2D CDW conductors. This work reports the CDW transitions of 2H-NbSe2 layers in graphene/NbSe2 heterostructures. The evolution of Raman spectra demonstrates that the CDW phase transition temperatures (TCDW ) of NbSe2 are dramatically decreased when capped by graphene. The induced anomalous short-range CDW state is confirmed by scanning tunneling microscopy measurements. The findings propose a new criterion to determine the TCDW through monitoring the line shape of the A1g mode. Meanwhile, the 2D band is also discovered as an indicator to observe the CDW transitions. First-principles calculations imply that interfacial electron doping suppresses the CDW states by impeding the lattice distortion of 2H-NbSe2 . The extraordinary random CDW lattice suggests deep insight into the formation mechanism of many collective electronic states and possesses great potential in modulating multifunctional devices
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|a Journal Article
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|a 2D transition metal dichalcogenides
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4 |
|a anomalous charge density wave
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| 650 |
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4 |
|a graphene/NbSe2 heterostructures
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| 650 |
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4 |
|a interfacial electron doping
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| 650 |
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4 |
|a phase transitions
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1 |
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|a Wu, Lishu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Xu, Hai
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Cong, Chunxiao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Si
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Feng, Shun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Hongbo
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zou, Chenji
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Shang, Jingzhi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yang, Shengyuan A
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Loh, Kian Ping
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Huang, Wei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Yu, Ting
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 32(2020), 45 vom: 30. Nov., Seite e2003746
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:32
|g year:2020
|g number:45
|g day:30
|g month:11
|g pages:e2003746
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|u http://dx.doi.org/10.1002/adma.202003746
|3 Volltext
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|d 32
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|e 45
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|h e2003746
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