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231225s2020 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202004040
|2 doi
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|a pubmed25n1048.xml
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|a (DE-627)NLM314661212
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|a (NLM)32893390
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|a DE-627
|b ger
|c DE-627
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|a eng
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| 100 |
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|a Zhang, Chen
|e verfasserin
|4 aut
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|a A π-D and π-A Exciplex-Forming Host for High-Efficiency and Long-Lifetime Single-Emissive-Layer Fluorescent White Organic Light-Emitting Diodes
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|c 2020
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 20.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2020 Wiley-VCH GmbH.
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|a Exciplex-forming hosts with thermally activated delayed fluorescence (TADF) provide a viable opportunity to unlock the full potential of the yet-to-be improved power efficiencies (PEs) and stabilities of all-fluorescent white organic light-emitting diodes (WOLEDs), but this, however, is hindered by the lack of stable blue exciplexes. Here, an advanced exciplex system is proposed by incorporating bipolar charge-transport π-spacers into both the electron-donor (D) and the electron-accepter (A) to increase their distance for hypsochromic-shifted emission while maintaining the superior transporting ability. By using spirofluorene as the π-spacer, 3,3'-bicarbazole as the D-unit, and 2,4,6-triphenyl-1,3,5-triazine as the A-unit, a π-D and π-A exciplex with sky-blue emission and fast reverse intersystem crossing process is thereof constructed. Combining this exciplex-forming host, a blue TADF-sensitizer, and a yellow conventional fluorescent dopant in a single-emissive-layer, the fabricated warm-white-emissive device simultaneously exhibits a low driving voltage of 3.08 V, an external quantum efficiency of 21.4%, and a remarkable T80 (time to 80% of the initial luminance) of >8200 h at 1000 cd m-2 , accompanied by a new benchmark PE of 69.6 lm W-1 among all-fluorescent WOLEDs
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|a Journal Article
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|a all-fluorescent devices
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|a exciplex-forming hosts
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| 650 |
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|a high power efficiency
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|a long lifetime
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| 650 |
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4 |
|a white organic light-emitting diodes
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| 700 |
1 |
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|a Lu, Yang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Ziyang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Yuewei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Xuewen
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Dongdong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Duan, Lian
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 32(2020), 42 vom: 14. Okt., Seite e2004040
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
1 |
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|g volume:32
|g year:2020
|g number:42
|g day:14
|g month:10
|g pages:e2004040
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|u http://dx.doi.org/10.1002/adma.202004040
|3 Volltext
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