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231225s2020 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202002176
|2 doi
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|a eng
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| 100 |
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|a Jeong, Ji-Eun
|e verfasserin
|4 aut
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|a Multifunctional Charge Transporting Materials for Perovskite Light-Emitting Diodes
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|c 2020
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|a Text
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|a ƒaComputermedien
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|a Date Revised 23.12.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2020 Wiley-VCH GmbH.
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|a Despite their low exciton-binding energies, metal halide perovskites are extensively studied as light-emitting materials owing to narrow emission with high color purity, easy/wide color tunability, and high photoluminescence quantum yields. To improve the efficiency of perovskite light-emitting diodes (PeLEDs), much effort has been devoted to controlling the emitting layer morphologies to induce charge confinement and decrease the nonradiative recombination. The interfaces between the emitting layer and charge transporting layer (CTL) are vulnerable to various defects that deteriorate the efficiency and stability of the PeLEDs. Therefore, the establishment of multifunctional CTLs that can improve not only charge transport but also critical factors that influence device performance, such as defect passivation, morphology/phase control, ion migration suppression, and light outcoupling efficiency, are highly required. Herein, the fundamental limitations of perovskites as emitters (i.e., defects, morphological and phase instability, high refractive index with poor outcoupling) and the recent developments with regard to multifunctional CTLs to compensate such limitations are summarized, and their device applications are also reviewed. Finally, based on the importance of multifunctional CTLs, the outlook and research prospects of multifunctional CTLs for the further improvement of PeLEDs are discussed
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|a Journal Article
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|a Review
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|a charge transporting layers
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|a light-emitting diodes
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|a multifunctional layers
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|a perovskites
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|a Park, Jong Hyun
|e verfasserin
|4 aut
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|a Jang, Chung Hyeon
|e verfasserin
|4 aut
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|a Song, Myoung Hoon
|e verfasserin
|4 aut
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|a Woo, Han Young
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 32(2020), 51 vom: 04. Dez., Seite e2002176
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|x 1521-4095
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|g volume:32
|g year:2020
|g number:51
|g day:04
|g month:12
|g pages:e2002176
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|u http://dx.doi.org/10.1002/adma.202002176
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