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231225s2020 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202001243
|2 doi
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|a pubmed24n1047.xml
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|a (DE-627)NLM314379096
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|a (NLM)32864773
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
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|a Chang, Xiaoming
|e verfasserin
|4 aut
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| 245 |
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|a Printable CsPbI3 Perovskite Solar Cells with PCE of 19% via an Additive Strategy
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|c 2020
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 07.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2020 Wiley-VCH GmbH.
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|a All-inorganic CsPbI3 holds promise for efficient tandem solar cells, but reported fabrication techniques are not transferrable to scalable manufacturing methods. Herein, printable CsPbI3 solar cells are reported, in which the charge transporting layers and photoactive layer are deposited by fast blade-coating at a low temperature (≤100 °C) in ambient conditions. High-quality CsPbI3 films are grown via introducing a low concentration of the multifunctional molecular additive Zn(C6 F5 )2 , which reconciles the conflict between air-flow-assisted fast drying and low-quality film including energy misalignment and trap formation. Material analysis reveals a preferential accumulation of the additive close to the perovskite/SnO2 interface and strong chemisorption on the perovskite surface, which leads to the formation of energy gradients and suppressed trap formation within the perovskite film, as well as a 150 meV improvement of the energetic alignment at the perovskite/SnO2 interface. The combined benefits translate into significant enhancement of the power conversion efficiency to 19% for printable solar cells. The devices without encapsulation degrade only by ≈2% after 700 h in air conditions
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|a Journal Article
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|a CsPbI3 perovskite solar cells
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|a energy alignment
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|a passivation
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|a printable devices
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|a Fang, Junjie
|e verfasserin
|4 aut
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|a Fan, Yuanyuan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Luo, Tao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Su, Hang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhang, Yalan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Lu, Jing
|e verfasserin
|4 aut
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|a Tsetseris, Leonidas
|e verfasserin
|4 aut
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|a Anthopoulos, Thomas D
|e verfasserin
|4 aut
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|a Liu, Shengzhong Frank
|e verfasserin
|4 aut
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| 700 |
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|a Zhao, Kui
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 32(2020), 40 vom: 31. Okt., Seite e2001243
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:32
|g year:2020
|g number:40
|g day:31
|g month:10
|g pages:e2001243
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|u http://dx.doi.org/10.1002/adma.202001243
|3 Volltext
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