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231225s2020 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202001878
|2 doi
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|a pubmed24n1047.xml
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|a (DE-627)NLM314378944
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|a (NLM)32864757
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Keshavarz, Masoumeh
|e verfasserin
|4 aut
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|a Tuning the Structural and Optoelectronic Properties of Cs2 AgBiBr6 Double-Perovskite Single Crystals through Alkali-Metal Substitution
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|c 2020
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 07.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2020 The Authors. Published by Wiley-VCH GmbH.
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|a Lead-free double perovskites have great potential as stable and nontoxic optoelectronic materials. Recently, Cs2 AgBiBr6 has emerged as a promising material, with suboptimal photon-to-charge carrier conversion efficiency, yet well suited for high-energy photon-detection applications. Here, the optoelectronic and structural properties of pure Cs2 AgBiBr6 and alkali-metal-substituted (Cs1- x Yx )2 AgBiBr6 (Y: Rb+ , K+ , Na+ ; x = 0.02) single crystals are investigated. Strikingly, alkali-substitution entails a tunability to the material system in its response to X-rays and structural properties that is most strongly revealed in Rb-substituted compounds whose X-ray sensitivity outperforms other double-perovskite-based devices reported. While the fundamental nature and magnitude of the bandgap remains unchanged, the alkali-substituted materials exhibit a threefold boost in their fundamental carrier recombination lifetime at room temperature. Moreover, an enhanced electron-acoustic phonon scattering is found compared to Cs2 AgBiBr6 . The study thus paves the way for employing cation substitution to tune the properties of double perovskites toward a new material platform for optoelectronics
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|a Journal Article
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|a X-ray response
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|a alkali-substitution
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|a double perovskites
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4 |
|a electron-phonon coupling
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4 |
|a photophysical properties
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| 700 |
1 |
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|a Debroye, Elke
|e verfasserin
|4 aut
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1 |
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|a Ottesen, Martin
|e verfasserin
|4 aut
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1 |
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|a Martin, Cristina
|e verfasserin
|4 aut
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1 |
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|a Zhang, Heng
|e verfasserin
|4 aut
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1 |
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|a Fron, Eduard
|e verfasserin
|4 aut
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1 |
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|a Küchler, Robert
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Steele, Julian A
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Bremholm, Martin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Van de Vondel, Joris
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Hai I
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Bonn, Mischa
|e verfasserin
|4 aut
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1 |
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|a Roeffaers, Maarten B J
|e verfasserin
|4 aut
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1 |
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|a Wiedmann, Steffen
|e verfasserin
|4 aut
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|a Hofkens, Johan
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 32(2020), 40 vom: 31. Okt., Seite e2001878
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:32
|g year:2020
|g number:40
|g day:31
|g month:10
|g pages:e2001878
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|u http://dx.doi.org/10.1002/adma.202001878
|3 Volltext
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|a GBV_ILN_350
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|a AR
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|d 32
|j 2020
|e 40
|b 31
|c 10
|h e2001878
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