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231225s2020 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202001329
|2 doi
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|a pubmed24n1045.xml
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|a (DE-627)NLM313512841
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|a (NLM)32776369
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
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|a Tan, Chaoliang
|e verfasserin
|4 aut
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|a Evaporated Sex Te1- x Thin Films with Tunable Bandgaps for Short-Wave Infrared Photodetectors
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|c 2020
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 22.02.2021
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2020 Wiley-VCH GmbH.
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|a Semiconducting absorbers in high-performance short-wave infrared (SWIR) photodetectors and imaging sensor arrays are dominated by single-crystalline germanium and III-V semiconductors. However, these materials require complex growth and device fabrication procedures. Here, thermally evaporated Sex Te1- x alloy thin films with tunable bandgaps for the fabrication of high-performance SWIR photodetectors are reported. From absorption measurements, it is shown that the bandgaps of Sex Te1- x films can be tuned continuously from 0.31 eV (Te) to 1.87 eV (Se). Owing to their tunable bandgaps, the peak responsivity position and photoresponse edge of Sex Te1- x film-based photoconductors can be tuned in the SWIR regime. By using an optical cavity substrate consisting of Au/Al2 O3 to enhance its absorption near the bandgap edge, the Se0.32 Te0.68 film (an optical bandgap of ≈0.8 eV)-based photoconductor exhibits a cut-off wavelength at ≈1.7 μm and gives a responsivity of 1.5 AW-1 and implied detectivity of 6.5 × 1010 cm Hz1/2 W-1 at 1.55 μm at room temperature. Importantly, the nature of the thermal evaporation process enables the fabrication of Se0.32 Te0.68 -based 42 × 42 focal plane arrays with good pixel uniformity, demonstrating the potential of this unique material system used for infrared imaging sensor systems
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|a Journal Article
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|a SexTe1-x thin films
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|a focal plane arrays
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|a photodetectors
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|a short-wave infrared
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|a tunable bandgaps
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1 |
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|a Amani, Matin
|e verfasserin
|4 aut
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1 |
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|a Zhao, Chunsong
|e verfasserin
|4 aut
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1 |
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|a Hettick, Mark
|e verfasserin
|4 aut
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1 |
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|a Song, Xiaohui
|e verfasserin
|4 aut
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1 |
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|a Lien, Der-Hsien
|e verfasserin
|4 aut
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1 |
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|a Li, Hao
|e verfasserin
|4 aut
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|a Yeh, Matthew
|e verfasserin
|4 aut
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|a Shrestha, Vivek Raj
|e verfasserin
|4 aut
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1 |
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|a Crozier, Kenneth B
|e verfasserin
|4 aut
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1 |
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|a Scott, Mary C
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Javey, Ali
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 32(2020), 38 vom: 23. Sept., Seite e2001329
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:32
|g year:2020
|g number:38
|g day:23
|g month:09
|g pages:e2001329
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|u http://dx.doi.org/10.1002/adma.202001329
|3 Volltext
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