Observation of Quantum Anomalous Hall Effect and Exchange Interaction in Topological Insulator/Antiferromagnet Heterostructure

Observation of Quantum Anomalous Hall Effect and Exchange Interaction in Topological Insulator/Antiferromagnet Heterostructure

© 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 32(2020), 34 vom: 30. Aug., Seite e2001460
1. Verfasser: Pan, Lei (VerfasserIn)
Weitere Verfasser: Grutter, Alexander, Zhang, Peng, Che, Xiaoyu, Nozaki, Tomohiro, Stern, Alex, Street, Mike, Zhang, Bing, Casas, Brian, He, Qing Lin, Choi, Eun Sang, Disseler, Steven M, Gilbert, Dustin A, Yin, Gen, Shao, Qiming, Deng, Peng, Wu, Yingying, Liu, Xiaoyang, Kou, Xufeng, Masashi, Sahashi, Han, Xiaodong, Binek, Christian, Chambers, Scott, Xia, Jing, Wang, Kang L
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2020
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article antiferromagnet quantum anomalous Hall effect topological insulators
Beschreibung
Zusammenfassung:© 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Integration of a quantum anomalous Hall insulator with a magnetically ordered material provides an additional degree of freedom through which the resulting exotic quantum states can be controlled. Here, an experimental observation is reported of the quantum anomalous Hall effect in a magnetically-doped topological insulator grown on the antiferromagnetic insulator Cr2 O3 . The exchange coupling between the two materials is investigated using field-cooling-dependent magnetometry and polarized neutron reflectometry. Both techniques reveal strong interfacial interaction between the antiferromagnetic order of the Cr2 O3 and the magnetic topological insulator, manifested as an exchange bias when the sample is field-cooled under an out-of-plane magnetic field, and an exchange spring-like magnetic depth profile when the system is magnetized within the film plane. These results identify antiferromagnetic insulators as suitable candidates for the manipulation of magnetic and topological order in topological insulator films
Beschreibung:Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.202001460