Impact and behavior of Sn during the Ni/GeSn solid-state reaction
© International Union of Crystallography 2020.
| Veröffentlicht in: | Journal of applied crystallography. - 1998. - 53(2020), Pt 3 vom: 01. Juni, Seite 605-613 |
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| 1. Verfasser: | |
| Weitere Verfasser: | , , , , , |
| Format: | Online-Aufsatz |
| Sprache: | English |
| Veröffentlicht: |
2020
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| Zugriff auf das übergeordnete Werk: | Journal of applied crystallography |
| Schlagworte: | Journal Article GeSn Ni Sn segregation X-ray diffraction solid-state reaction transmission electron microscopy |
| Zusammenfassung: | © International Union of Crystallography 2020. Ni-based intermetallics are promising materials for forming efficient contacts in GeSn-based Si photonic devices. However, the role that Sn might have during the Ni/GeSn solid-state reaction (SSR) is not fully understood. A comprehensive analysis focused on Sn segregation during the Ni/GeSn SSR was carried out. In situ X-ray diffraction and cross-section transmission electron microscopy measurements coupled with energy-dispersive X-ray spectrometry and electron energy-loss spectroscopy atomic mappings were performed to follow the phase sequence, Sn distribution and segregation. The results showed that, during the SSR, Sn was incorporated into the intermetallic phases. Sn segregation happened first around the grain boundaries (GBs) and then towards the surface. Sn accumulation around GBs hampered atom diffusion, delaying the growth of the Ni(GeSn) phase. Higher thermal budgets will thus be mandatory for formation of contacts in high-Sn-content photonic devices, which could be detrimental for thermal stability |
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| Beschreibung: | Date Revised 30.07.2024 published: Electronic-eCollection Citation Status PubMed-not-MEDLINE |
| ISSN: | 0021-8898 |
| DOI: | 10.1107/S1600576720003064 |