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231225s2020 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202002632
|2 doi
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|a pubmed24n1039.xml
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|a (NLM)32613758
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|a DE-627
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|a eng
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|a Liu, Cheng
|e verfasserin
|4 aut
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|a α-CsPbI3 Bilayers via One-Step Deposition for Efficient and Stable All-Inorganic Perovskite Solar Cells
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|c 2020
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a The emerging inorganic CsPbI3 perovskites are promising wide-bandgap materials for application in tandem solar cells, but they tend to transit from a black α phase to a yellow δ phase in ambient conditions. Herein, a gradient grain-sized (GGS) CsPbI3 bilayer is developed to stabilize the α phase via a single-step film deposition process. The spontaneously upward migration of (adamantan-1-yl)methanammonium (ADMA) based on the hot-casting technique causes self-assembly of the hierarchical morphology for the perovskite layers. Due to the strong steric effect of the surficial ADMA cation, a self-assembly tiny grain-sized CsPbI3 layer is in situ formed at the surface site, which exhibits notably enhanced phase stability by its high surface energy. Meanwhile, a large grain-sized CsPbI3 layer is obtained at the bottom site with high charge mobility and low trap density of states, which benefits from the regulated growth rates by the interaction between ADMA and perovskites. The perovskite solar cell (PSC) based on the GGS CsPbI3 bilayer shows an efficiency of 15.5% and operates stably for 1000 h under ambient conditions. This work confirms that redistributing the surface energy of perovskite films is a facile strategy to stabilize metastable PSCs without the cost of efficiency loss
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|a Journal Article
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|a CsPbI3
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|a bilayers
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|a defect states
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|a inorganic perovskite solar cells
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|a phase stability
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|a Yang, Yi
|e verfasserin
|4 aut
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|a Syzgantseva, Olga A
|e verfasserin
|4 aut
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1 |
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|a Ding, Yong
|e verfasserin
|4 aut
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1 |
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|a Syzgantseva, Maria A
|e verfasserin
|4 aut
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|a Zhang, Xianfu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Asiri, Abdullah M
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Dai, Songyuan
|e verfasserin
|4 aut
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|a Nazeeruddin, Mohammad Khaja
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 32(2020), 32 vom: 01. Aug., Seite e2002632
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:32
|g year:2020
|g number:32
|g day:01
|g month:08
|g pages:e2002632
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|u http://dx.doi.org/10.1002/adma.202002632
|3 Volltext
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