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231225s2020 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202002608
|2 doi
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|a pubmed24n1039.xml
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|a (DE-627)NLM311914993
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|a (NLM)32613655
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Yang, Xinbo
|e verfasserin
|4 aut
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| 245 |
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|a A Highly Conductive Titanium Oxynitride Electron-Selective Contact for Efficient Photovoltaic Devices
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|c 2020
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a High-quality carrier-selective contacts with suitable electronic properties are a prerequisite for photovoltaic devices with high power conversion efficiency (PCE). In this work, an efficient electron-selective contact, titanium oxynitride (TiOx Ny ), is developed for crystalline silicon (c-Si) and organic photovoltaic devices. Atomic-layer-deposited TiOx Ny is demonstrated to be highly conductive with a proper work function (4.3 eV) and a wide bandgap (3.4 eV). Thin TiOx Ny films simultaneously provide a moderate surface passivation and enable a low contact resistivity on c-Si surfaces. By implementation of an optimal TiOx Ny -based contact, a state-of-the-art PCE of 22.3% is achieved for a c-Si solar cell featuring a full-area dopant-free electron-selective contact. Simultaneously, conductive TiOx Ny is proven to be an efficient electron-transport layer for organic photovoltaic (OPV) devices. A remarkably high PCE of 17.02% is achieved for an OPV device with an electron-transport TiOx Ny layer, which is superior to conventional ZnO-based devices with a PCE of 16.10%. Atomic-layer-deposited TiOx Ny ETL on a large area with a high uniformity may help accelerate the commercialization of emerging solar technologies
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|a Journal Article
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|a electron-selective contacts
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|a organic solar cells
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4 |
|a passivating contacts
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4 |
|a silicon solar cells
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| 650 |
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4 |
|a titanium oxynitride
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1 |
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|a Lin, Yuanbao
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Jiang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Wenzhu
|e verfasserin
|4 aut
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1 |
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|a Bi, Qunyu
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Song, Xin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Kang, Jingxuan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Xu, Fuzong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Xu, Lujia
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Hedhili, Mohamed N
|e verfasserin
|4 aut
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1 |
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|a Baran, Derya
|e verfasserin
|4 aut
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1 |
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|a Zhang, Xiaohong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Anthopoulos, Thomas D
|e verfasserin
|4 aut
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| 700 |
1 |
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|a De Wolf, Stefaan
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 32(2020), 32 vom: 15. Aug., Seite e2002608
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:32
|g year:2020
|g number:32
|g day:15
|g month:08
|g pages:e2002608
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| 856 |
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|u http://dx.doi.org/10.1002/adma.202002608
|3 Volltext
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