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231225s2020 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202001890
|2 doi
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|a pubmed25n1039.xml
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|a (DE-627)NLM311860141
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|a (NLM)32608083
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Wang, Junyong
|e verfasserin
|4 aut
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| 245 |
1 |
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|a Polarized Light-Emitting Diodes Based on Anisotropic Excitons in Few-Layer ReS2
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|c 2020
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a An on-chip polarized light source is desirable in signal processing, optical communication, and display applications. Layered semiconductors with reduced in-plane symmetry have inherent anisotropic excitons that are attractive candidates as polarized dipole emitters. Herein, the demonstration of polarized light-emitting diode based on anisotropic excitons in few-layer ReS2 , a 2D semiconductor with excitonic transition energy of 1.5-1.6 eV, is reported. The light-emitting device is based on minority carrier (hole) injection into n-type ReS2 through a hexagonal boron nitride (hBN) tunnel barrier in a metal-insulator-semiconductor (MIS) van der Waals heterostack. Two distinct emission peaks from excitons are observed at near-infrared wavelength regime from few-layer ReS2 . The emissions exhibit a degree of polarization of 80% reflecting the nearly 1D nature of excitons in ReS2
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|a Journal Article
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|a 2D semiconductors, anisotropic excitons
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|a light-emitting diodes
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|a linear polarization
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|a rhenium disulfide (ReS2)
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| 700 |
1 |
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|a Zhou, Yong Justin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Xiang, Du
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ng, Shiuan Jun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Watanabe, Kenji
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Taniguchi, Takashi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Eda, Goki
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 32(2020), 32 vom: 05. Aug., Seite e2001890
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
1 |
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|g volume:32
|g year:2020
|g number:32
|g day:05
|g month:08
|g pages:e2001890
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| 856 |
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|u http://dx.doi.org/10.1002/adma.202001890
|3 Volltext
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