Nonvolatile Electrically Reconfigurable Integrated Photonic Switch Enabled by a Silicon PIN Diode Heater

© 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Détails bibliographiques
Publié dans:Advanced materials (Deerfield Beach, Fla.). - 1998. - 32(2020), 31 vom: 02. Aug., Seite e2001218
Auteur principal: Zheng, Jiajiu (Auteur)
Autres auteurs: Fang, Zhuoran, Wu, Changming, Zhu, Shifeng, Xu, Peipeng, Doylend, Jonathan K, Deshmukh, Sanchit, Pop, Eric, Dunham, Scott, Li, Mo, Majumdar, Arka
Format: Article en ligne
Langue:English
Publié: 2020
Accès à la collection:Advanced materials (Deerfield Beach, Fla.)
Sujets:Journal Article integrated photonics nonvolatile photonic switches phase-change materials reconfigurable photonics silicon photonics
Description
Résumé:© 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Reconfigurability of photonic integrated circuits (PICs) has become increasingly important due to the growing demands for electronic-photonic systems on a chip driven by emerging applications, including neuromorphic computing, quantum information, and microwave photonics. Success in these fields usually requires highly scalable photonic switching units as essential building blocks. Current photonic switches, however, mainly rely on materials with weak, volatile thermo-optic or electro-optic modulation effects, resulting in large footprints and high energy consumption. As a promising alternative, chalcogenide phase-change materials (PCMs) exhibit strong optical modulation in a static, self-holding fashion, but the scalability of present PCM-integrated photonic applications is still limited by the poor optical or electrical actuation approaches. Here, with phase transitions actuated by in situ silicon PIN diode heaters, scalable nonvolatile electrically reconfigurable photonic switches using PCM-clad silicon waveguides and microring resonators are demonstrated. As a result, intrinsically compact and energy-efficient switching units operated with low driving voltages, near-zero additional loss, and reversible switching with high endurance are obtained in a complementary metal-oxide-semiconductor (CMOS)-compatible process. This work can potentially enable very large-scale CMOS-integrated programmable electronic-photonic systems such as optical neural networks and general-purpose integrated photonic processors
Description:Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.202001218