Ultralow Voltage Manipulation of Ferromagnetism

Bibliographische Detailangaben
Veröffentlicht in:	Advanced materials (Deerfield Beach, Fla.). - 1998. - 32(2020), 28 vom: 01. Juli, Seite e2001943
1. Verfasser:	Prasad, Bhagwati (VerfasserIn)
Weitere Verfasser:	Huang, Yen-Lin, Chopdekar, Rajesh V, Chen, Zuhuang, Steffes, James, Das, Sujit, Li, Qian, Yang, Mengmeng, Lin, Chia-Ching, Gosavi, Tanay, Nikonov, Dmitri E, Qiu, Zi Qiang, Martin, Lane W, Huey, Bryan D, Young, Ian, Íñiguez, Jorge, Manipatruni, Sasikanth, Ramesh, Ramamoorthy
Format:	Online-Aufsatz
Sprache:	English
Veröffentlicht:	2020
Zugriff auf das übergeordnete Werk:	Advanced materials (Deerfield Beach, Fla.)
Schlagworte:	Journal Article magnetoelectrics multiferroics nonvolatile memories spintronics ultralow-power spintronics

Beschreibung
Zusammenfassung:	© 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Spintronic elements based on spin transfer torque have emerged with potential for on-chip memory, but they suffer from large energy dissipation due to the large current densities required. In contrast, an electric-field-driven magneto-electric storage element can operate with capacitive displacement charge and potentially reach 1-10 µJ cm-2 switching operation. Here, magneto-electric switching of a magnetoresistive element is shown, operating at or below 200 mV, with a pathway to get down to 100 mV. A combination of phase detuning is utilized via isovalent La substitution and thickness scaling in multiferroic BiFeO3 to scale the switching energy density to ≈10 µJ cm-2 . This work provides a template to achieve attojoule-class nonvolatile memories
Beschreibung:	Date Revised 30.09.2020 published: Print-Electronic Citation Status PubMed-not-MEDLINE
ISSN:	1521-4095
DOI:	10.1002/adma.202001943