GeSe : Optical Spectroscopy and Theoretical Study of a van der Waals Solar Absorber
Copyright © 2020 American Chemical Society.
Veröffentlicht in: | Chemistry of materials : a publication of the American Chemical Society. - 1998. - 32(2020), 7 vom: 14. Apr., Seite 3245-3253 |
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1. Verfasser: | |
Weitere Verfasser: | , , , , , , , , , , |
Format: | Online-Aufsatz |
Sprache: | English |
Veröffentlicht: |
2020
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Zugriff auf das übergeordnete Werk: | Chemistry of materials : a publication of the American Chemical Society |
Schlagworte: | Journal Article |
Zusammenfassung: | Copyright © 2020 American Chemical Society. The van der Waals material GeSe is a potential solar absorber, but its optoelectronic properties are not yet fully understood. Here, through a combined theoretical and experimental approach, the optoelectronic and structural properties of GeSe are determined. A fundamental absorption onset of 1.30 eV is found at room temperature, close to the optimum value according to the Shockley-Queisser detailed balance limit, in contrast to previous reports of an indirect fundamental transition of 1.10 eV. The measured absorption spectra and first-principles joint density of states are mutually consistent, both exhibiting an additional distinct onset ∼0.3 eV above the fundamental absorption edge. The band gap values obtained from first-principles calculations converge, as the level of theory and corresponding computational cost increases, to 1.33 eV from the quasiparticle self-consistent GW method, including the solution to the Bethe-Salpeter equation. This agrees with the 0 K value determined from temperature-dependent optical absorption measurements. Relaxed structures based on hybrid functionals reveal a direct fundamental transition in contrast to previous reports. The optoelectronic properties of GeSe are resolved with the system described as a direct semiconductor with a 1.30 eV room temperature band gap. The high level of agreement between experiment and theory encourages the application of this computational methodology to other van der Waals materials |
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Beschreibung: | Date Revised 23.04.2020 published: Print-Electronic Citation Status PubMed-not-MEDLINE |
ISSN: | 0897-4756 |
DOI: | 10.1021/acs.chemmater.0c00453 |