Strain-Induced Modification of the Optical Characteristics of Quantum Emitters in Hexagonal Boron Nitride

© 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 32(2020), 21 vom: 26. Mai, Seite e1908316
1. Verfasser: Mendelson, Noah (VerfasserIn)
Weitere Verfasser: Doherty, Marcus, Toth, Milos, Aharonovich, Igor, Tran, Toan Trong
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2020
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article 2D materials hexagonal boron nitride quantum emitters strain tuning
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520 |a Quantum emitters in hexagonal boron nitride (hBN) are promising building blocks for the realization of integrated quantum photonic systems. However, their spectral inhomogeneity currently limits their potential applications. Here, tensile strain is applied to quantum emitters embedded in few-layer hBN films and both red and blue spectral shifts are realized with tuning magnitudes up to 65 meV, a record for any 2D quantum source. Reversible tuning of the emission and related photophysical properties is demonstrated. Rotation of the optical dipole in response to strain is also observed, suggesting the presence of a second excited state. A theoretical model is derived to describe strain-based tuning in hBN, and the rotation of the optical dipole. The study demonstrates the immense potential for strain tuning of quantum emitters in layered materials to enable their employment in scalable quantum photonic networks 
650 4 |a Journal Article 
650 4 |a 2D materials 
650 4 |a hexagonal boron nitride 
650 4 |a quantum emitters 
650 4 |a strain tuning 
700 1 |a Doherty, Marcus  |e verfasserin  |4 aut 
700 1 |a Toth, Milos  |e verfasserin  |4 aut 
700 1 |a Aharonovich, Igor  |e verfasserin  |4 aut 
700 1 |a Tran, Toan Trong  |e verfasserin  |4 aut 
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