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231225s2020 xx |||||o 00| ||eng c |
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|a 10.1002/adma.202000270
|2 doi
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|a pubmed24n1026.xml
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|a (DE-627)NLM307883043
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|a (NLM)32202010
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Keene, Scott T
|e verfasserin
|4 aut
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|a Enhancement-Mode PEDOT:PSS Organic Electrochemical Transistors Using Molecular De-Doping
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|c 2020
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2020 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Organic electrochemical transistors (OECTs) show great promise for flexible, low-cost, and low-voltage sensors for aqueous solutions. The majority of OECT devices are made using the polymer blend poly(ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS), in which PEDOT is intrinsically doped due to inclusion of PSS. Because of this intrinsic doping, PEDOT:PSS OECTs generally operate in depletion mode, which results in a higher power consumption and limits stability. Here, a straightforward method to de-dope PEDOT:PSS using commercially available amine-based molecular de-dopants to achieve stable enhancement-mode OECTs is presented. The enhancement-mode OECTs show mobilities near that of pristine PEDOT:PSS (≈2 cm2 V-1 s-1 ) with stable operation over 1000 on/off cycles. The electron and proton exchange among PEDOT, PSS, and the molecular de-dopants are characterized to reveal the underlying chemical mechanism of the threshold voltage shift to negative voltages. Finally, the effect of the de-doping on the microstructure of the spin-cast PEDOT:PSS films is investigated
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|a Journal Article
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|a aliphatic amines
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|a bioelectronics
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|a enhancement-mode transistor
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|a molecular doping
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|a organic electrochemical transistor
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|a poly(ethylenedioxythiophene):poly(styrene sulfonate
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1 |
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|a van der Pol, Tom P A
|e verfasserin
|4 aut
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1 |
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|a Zakhidov, Dante
|e verfasserin
|4 aut
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1 |
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|a Weijtens, Christ H L
|e verfasserin
|4 aut
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|a Janssen, René A J
|e verfasserin
|4 aut
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1 |
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|a Salleo, Alberto
|e verfasserin
|4 aut
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|a van de Burgt, Yoeri
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 32(2020), 19 vom: 15. Mai, Seite e2000270
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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1 |
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|g volume:32
|g year:2020
|g number:19
|g day:15
|g month:05
|g pages:e2000270
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|u http://dx.doi.org/10.1002/adma.202000270
|3 Volltext
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|a GBV_ILN_350
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|a AR
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|d 32
|j 2020
|e 19
|b 15
|c 05
|h e2000270
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