Improved contacts to p-type MoS2 transistors by charge-transfer doping and contact engineering

MoS2 is known to show stubborn n-type behavior due to its intrinsic band structure and Fermi level pinning. Here, we investigate the combined effects of molecular doping and contact engineering on the transport and contact properties of monolayer (ML) MoS2 devices. Significant p-type (hole-transport...

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Bibliographische Detailangaben

Veröffentlicht in:	Applied physics letters. - 1998. - 115(2019), 7 vom: 13.
1. Verfasser:	Zhang, Siyuan (VerfasserIn)
Weitere Verfasser:	Le, Son T, Richter, Curt A, Hacker, Christina A
Format:	Online-Aufsatz
Sprache:	English
Veröffentlicht:	2019
Zugriff auf das übergeordnete Werk:	Applied physics letters
Schlagworte:	Journal Article