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231225s2020 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201906571
|2 doi
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|a pubmed25n1023.xml
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|a (DE-627)NLM307012085
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|a (NLM)32108964
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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|a Lei, Lei
|e verfasserin
|4 aut
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|a Efficient Energy Funneling in Quasi-2D Perovskites
|b From Light Emission to Lasing
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|c 2020
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Quasi-2D Ruddlesden-Popper halide perovskites with a large exciton binding energy, self-assembled quantum wells, and high quantum yield draw attention for optoelectronic device applications. Thin films of these quasi-2D perovskites consist of a mixture of domains having different dimensionality, allowing energy funneling from lower-dimensional nanosheets (high-bandgap domains) to 3D nanocrystals (low-bandgap domains). High-quality quasi-2D perovskite (PEA)2 (FA)3 Pb4 Br13 films are fabricated by solution engineering. Grazing-incidence wide-angle X-ray scattering measurements are conducted to study the crystal orientation, and transient absorption spectroscopy measurements are conducted to study the charge-carrier dynamics. These data show that highly oriented 2D crystal films have a faster energy transfer from the high-bandgap domains to the low-bandgap domains (<0.5 ps) compared to the randomly oriented films. High-performance light-emitting diodes can be realized with these highly oriented 2D films. Finally, amplified spontaneous emission with a low threshold 4.16 µJ cm-2 is achieved and distributed feedback lasers are also demonstrated. These results show that it is important to control the morphology of the quasi-2D films to achieve efficient energy transfer, which is a critical requirement for light-emitting devices
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|a Journal Article
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|a amplified spontaneous emission
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|a distributed-feedback lasers
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|a energy funneling
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|a light-emitting diodes
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|a quasi-2D perovskites
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|a Seyitliyev, Dovletgeldi
|e verfasserin
|4 aut
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|a Stuard, Samuel
|e verfasserin
|4 aut
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|a Mendes, Juliana
|e verfasserin
|4 aut
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|a Dong, Qi
|e verfasserin
|4 aut
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|a Fu, Xiangyu
|e verfasserin
|4 aut
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|a Chen, Yi-An
|e verfasserin
|4 aut
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|a He, Siliang
|e verfasserin
|4 aut
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|a Yi, Xueping
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhu, Liping
|e verfasserin
|4 aut
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1 |
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|a Chang, Chih-Hao
|e verfasserin
|4 aut
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|a Ade, Harald
|e verfasserin
|4 aut
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|a Gundogdu, Kenan
|e verfasserin
|4 aut
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|a So, Franky
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 32(2020), 16 vom: 15. Apr., Seite e1906571
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
1 |
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|g volume:32
|g year:2020
|g number:16
|g day:15
|g month:04
|g pages:e1906571
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| 856 |
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|u http://dx.doi.org/10.1002/adma.201906571
|3 Volltext
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