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231225s2020 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201907970
|2 doi
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|a pubmed24n1023.xml
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|a (DE-627)NLM307006492
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|a (NLM)32108388
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
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|a Zhu, Wenliang
|e verfasserin
|4 aut
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|a Interfacial Superconductivity on the Topological Semimetal Tungsten Carbide Induced by Metal Deposition
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|c 2020
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Interfaces between materials with different electronic ground states have become powerful platforms for creating and controlling novel quantum states of matter, in which inversion symmetry breaking and other effects at the interface may introduce additional electronic states. Among the emergent phenomena, superconductivity is of particular interest. Here, by depositing metal films on a newly identified topological semimetal tungsten carbide (WC) single crystal, interfacial superconductivity is obtained, evidenced from soft point-contact spectroscopy. This very robust phenomenon is demonstrated for a wide range of metal/WC interfaces, involving both nonmagnetic and ferromagnetic films, and the superconducting transition temperatures are surprisingly insensitive to the magnetism of thin films. This method offers an opportunity to explore the long-sought topological superconductivity and has potential applications in topological-state-based spin devices
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|a Journal Article
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|a Andreev reflections
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|a interfacial superconductivity
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|a metal deposition
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|a point-contact spectroscopy
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|a topological semimetals
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|a Hou, Xingyuan
|e verfasserin
|4 aut
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1 |
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|a Li, Jing
|e verfasserin
|4 aut
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1 |
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|a Huang, Yifei
|e verfasserin
|4 aut
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|a Zhang, Shuai
|e verfasserin
|4 aut
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1 |
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|a He, Junbao
|e verfasserin
|4 aut
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|a Chen, Dong
|e verfasserin
|4 aut
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1 |
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|a Wang, Yiyan
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Dong, Qingxin
|e verfasserin
|4 aut
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|a Zhang, Mengdi
|e verfasserin
|4 aut
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1 |
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|a Yang, Huaixin
|e verfasserin
|4 aut
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|a Ren, Zhian
|e verfasserin
|4 aut
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|a Hu, Jiangping
|e verfasserin
|4 aut
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|a Shan, Lei
|e verfasserin
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|a Chen, Genfu
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 32(2020), 16 vom: 28. Apr., Seite e1907970
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:32
|g year:2020
|g number:16
|g day:28
|g month:04
|g pages:e1907970
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|u http://dx.doi.org/10.1002/adma.201907970
|3 Volltext
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