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231225s2020 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201906003
|2 doi
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|a pubmed25n1023.xml
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|a (DE-627)NLM306958902
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|a (NLM)32103572
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|a DE-627
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|a eng
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| 100 |
1 |
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|a Anh, Le Duc
|e verfasserin
|4 aut
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| 245 |
1 |
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|a High-Mobility 2D Hole Gas at a SrTiO3 Interface
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|c 2020
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| 336 |
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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| 338 |
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Strontium titanate (SrTiO3 or STO) is important for oxide-based electronics as it serves as a standard substrate for a wide range of high-temperature superconducting cuprates, colossal magnetoresistive manganites, and multiferroics. Moreover, in its heterostructures with different materials, STO exhibits a broad spectrum of important physics such as superconductivity, magnetism, the quantum Hall effect, giant thermoelectric effect, and colossal ionic conductivity, most of which emerge in a two-dimensional (2D) electron gas (2DEG) formed at an STO interface. However, little is known about its counterpart system, a 2D hole gas (2DHG) at the STO interface. Here, a simple way of realizing a 2DHG with an ultrahigh mobility of 24 000 cm2 V-1 s-1 is demonstrated using an interface between STO and a thin amorphous FeOy layer, made by depositing a sub-nanometer-thick Fe layer on an STO substrate at room temperature. This mobility is the highest among those reported for holes in oxides. The carrier type can be switched from p-type (2DHG) to n-type (2DEG) by controlling the Fe thickness. This unprecedented method of forming a 2DHG at an STO interface provides a pathway to unexplored hole-related physics in this system and enables extremely low-cost and high-speed oxide electronics
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4 |
|a Journal Article
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4 |
|a 2D hole gases
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| 650 |
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4 |
|a oxide-based electronics
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| 650 |
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4 |
|a room-temperature deposition
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| 700 |
1 |
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|a Kaneta, Shingo
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Tokunaga, Masashi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Seki, Munetoshi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Tabata, Hitoshi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Tanaka, Masaaki
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Ohya, Shinobu
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 32(2020), 14 vom: 20. Apr., Seite e1906003
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
1 |
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|g volume:32
|g year:2020
|g number:14
|g day:20
|g month:04
|g pages:e1906003
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| 856 |
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|u http://dx.doi.org/10.1002/adma.201906003
|3 Volltext
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