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231225s2020 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201908107
|2 doi
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|a pubmed25n1022.xml
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|a (DE-627)NLM306928167
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|a (NLM)32100401
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|a DE-627
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|a eng
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|a Zhou, Xianyong
|e verfasserin
|4 aut
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|a Highly Efficient and Stable GABr-Modified Ideal-Bandgap (1.35 eV) Sn/Pb Perovskite Solar Cells Achieve 20.63% Efficiency with a Record Small Voc Deficit of 0.33 V
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|c 2020
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a 1.5-1.6 eV bandgap Pb-based perovskite solar cells (PSCs) with 30-31% theoretical efficiency limit by the Shockley-Queisser model achieve 21-24% power conversion efficiencies (PCEs). However, the best PCEs of reported ideal-bandgap (1.3-1.4 eV) Sn-Pb PSCs with a higher 33% theoretical efficiency limit are <18%, mainly because of their large open-circuit voltage (Voc ) deficits (>0.4 V). Herein, it is found that the addition of guanidinium bromide (GABr) can significantly improve the structural and photoelectric characteristics of ideal-bandgap (≈1.34 eV) Sn-Pb perovskite films. GABr introduced in the perovskite films can efficiently reduce the high defect density caused by Sn2+ oxidation in the perovskite, which is favorable for facilitating hole transport, decreasing charge-carrier recombination, and reducing the Voc deficit. Therefore, the best PCE of 20.63% with a certificated efficiency of 19.8% is achieved in 1.35 eV PSCs, along with a record small Voc deficit of 0.33 V, which is the highest PCE among all values reported to date for ideal-bandgap Sn-Pb PSCs. Moreover, the GABr-modified PSCs exhibit significantly improved environmental and thermal stability. This work represents a noteworthy step toward the fabrication of efficient and stable ideal-bandgap PSCs
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|a Journal Article
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|a guanidinium bromide
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|a ideal bandgap
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|a mixed tin-lead perovskites
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|a molecular doping
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|a perovskite solar cells
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|a Zhang, Luozheng
|e verfasserin
|4 aut
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|a Wang, Xingzhu
|e verfasserin
|4 aut
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|a Liu, Chang
|e verfasserin
|4 aut
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|a Chen, Shi
|e verfasserin
|4 aut
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|a Zhang, Meiqing
|e verfasserin
|4 aut
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|a Li, Xiangnan
|e verfasserin
|4 aut
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|a Yi, Wendi
|e verfasserin
|4 aut
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| 700 |
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|a Xu, Baomin
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 32(2020), 14 vom: 02. Apr., Seite e1908107
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
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|g volume:32
|g year:2020
|g number:14
|g day:02
|g month:04
|g pages:e1908107
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|u http://dx.doi.org/10.1002/adma.201908107
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