Surface-Controlled Crystal Alignment of Naphthyl End-Capped Oligothiophene on Graphene Thin-Film Growth Studied by in Situ X-ray Diffraction

Surface-Controlled Crystal Alignment of Naphthyl End-Capped Oligothiophene on Graphene : Thin-Film Growth Studied by in Situ X-ray Diffraction

We report on the microstructure, morphology, and growth of 5,5'-bis(naphth-2-yl)-2,2'-bithiophene (NaT2) thin films deposited on graphene, characterized by grazing incidence X-ray diffraction (GIXRD) and complemented by atomic force microscopy (AFM) measurements. NaT2 is deposited on two t...

Ausführliche Beschreibung

Bibliographische Detailangaben
Veröffentlicht in:Langmuir : the ACS journal of surfaces and colloids. - 1992. - 36(2020), 8 vom: 03. März, Seite 1898-1906
1. Verfasser: Huss-Hansen, Mathias K (VerfasserIn)
Weitere Verfasser: Hodas, Martin, Mrkyvkova, Nada, Hagara, Jakub, Jensen, Bjarke B E, Osadnik, Andreas, Lützen, Arne, Majková, Eva, Siffalovic, Peter, Schreiber, Frank, Tavares, Luciana, Kjelstrup-Hansen, Jakob, Knaapila, Matti
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2020
Zugriff auf das übergeordnete Werk:Langmuir : the ACS journal of surfaces and colloids
Schlagworte:Journal Article
Beschreibung
Zusammenfassung:We report on the microstructure, morphology, and growth of 5,5'-bis(naphth-2-yl)-2,2'-bithiophene (NaT2) thin films deposited on graphene, characterized by grazing incidence X-ray diffraction (GIXRD) and complemented by atomic force microscopy (AFM) measurements. NaT2 is deposited on two types of graphene surfaces: custom-made samples where chemical vapor deposition (CVD)-grown graphene layers are transferred onto a Si/SiO2 substrate by us and common commercially transferred CVD graphene on Si/SiO2. Pristine Si/SiO2 substrates are used as a reference. The NaT2 crystal structure and orientation depend strongly on the underlying surface, with the molecules predominantly lying down on the graphene surface (face-on orientation) and standing nearly out-of-plane (edge-on orientation) on the Si/SiO2 reference surface. Post growth GIXRD and AFM measurements reveal that the crystalline structure and grain morphology differ depending on whether there is polymer residue left on the graphene surface. In situ GIXRD measurements show that the thickness dependence of the intensity of the (111) reflection from the crystalline edge-on phase does not intersect zero at the beginning of the deposition process, suggesting that an initial wetting layer, corresponding to 1-2 molecular layers, is formed at the surface-film interface. By contrast, the (111) reflection intensity from the crystalline face-on phase grows at a constant rate as a function of film thickness during the entire deposition
Beschreibung:Date Revised 03.03.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1520-5827
DOI:10.1021/acs.langmuir.9b03467