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231225s2020 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201907105
|2 doi
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|a pubmed25n1020.xml
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|a (DE-627)NLM306155435
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|a (NLM)32020742
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
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|a Guo, Xiangdong
|e verfasserin
|4 aut
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| 245 |
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|a Efficient All-Optical Plasmonic Modulators with Atomically Thin Van Der Waals Heterostructures
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|c 2020
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|2 rdacarrier
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a All-optical modulators are attracting significant attention due to their intrinsic perspective on high-speed, low-loss, and broadband performance, which are promising to replace their electrical counterparts for future information communication technology. However, high-power consumption and large footprint remain obstacles for the prevailing nonlinear optical methods due to the weak photon-photon interaction. Here, efficient all-optical mid-infrared plasmonic waveguide and free-space modulators in atomically thin graphene-MoS2 heterostructures based on the ultrafast and efficient doping of graphene with the photogenerated carrier in the monolayer MoS2 are reported. Plasmonic modulation of 44 cm-1 is demonstrated by an LED with light intensity down to 0.15 mW cm-2 , which is four orders of magnitude smaller than the prevailing graphene nonlinear all-optical modulators (≈103 mW cm-2 ). The ultrafast carrier transfer and recombination time of photogenerated carriers in the heterostructure may achieve ultrafast modulation of the graphene plasmon. The demonstration of the efficient all-optical mid-infrared plasmonic modulators, with chip-scale integrability and deep-sub wavelength light field confinement derived from the van der Waals heterostructures, may be an important step toward on-chip all-optical devices
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|a Journal Article
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|a 2D materials
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|a all-optical plasmonic modulators
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|a graphene plasmon
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|a van der Waals heterostructures
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1 |
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|a Liu, Ruina
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Hu, Debo
|e verfasserin
|4 aut
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|a Hu, Hai
|e verfasserin
|4 aut
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|a Wei, Zheng
|e verfasserin
|4 aut
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|a Wang, Rui
|e verfasserin
|4 aut
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| 700 |
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|a Dai, Yunyun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Cheng, Yang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chen, Ke
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Kaihui
|e verfasserin
|4 aut
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| 700 |
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|a Zhang, Guangyu
|e verfasserin
|4 aut
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| 700 |
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|a Zhu, Xing
|e verfasserin
|4 aut
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|a Sun, Zhipei
|e verfasserin
|4 aut
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|a Yang, Xiaoxia
|e verfasserin
|4 aut
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| 700 |
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|a Dai, Qing
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 32(2020), 11 vom: 17. März, Seite e1907105
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
1 |
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|g volume:32
|g year:2020
|g number:11
|g day:17
|g month:03
|g pages:e1907105
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|u http://dx.doi.org/10.1002/adma.201907105
|3 Volltext
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