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231225s2020 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201907288
|2 doi
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|a pubmed25n1018.xml
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|a (DE-627)NLM305738658
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|a (NLM)31977113
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Qu, Ting-Yu
|e verfasserin
|4 aut
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| 245 |
1 |
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|a A Flexible Carbon Nanotube Sen-Memory Device
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|c 2020
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a In a modern electronics system, charge-coupled devices and data storage devices are the two most indispensable components. Although there has been rapid and independent progress in their development during the last three decades, a cofunctionality of both sensing and memory at single-unit level is yet premature for flexible electronics. For wearable electronics that work in ultralow power conditions and involve strains, conventional sensing-and-memory systems suffer from low sensitivity and are not able to directly transform sensed information into sufficient memory. Here, a new transformative device is demonstrated, which is called "sen-memory", that exhibits the dual functionality of sensing and memory in a monolithic integrated circuit. The active channel of the device is formed by a carbon nanotube thin film and the floating gate is formed by a controllably oxidized aluminum nanoparticle array for electrical- and optical-programming. The device exhibits a high on-off current ratio of ≈106 , a long-term retention of ≈108 s, and durable flexibility at a bending strain of 0.4%. It is shown that the device senses a photogenerated pattern in seconds at zero bias and memorizes an image for a couple of years
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|a Journal Article
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4 |
|a carbon nanotubes
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| 650 |
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4 |
|a flexible electronics
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| 650 |
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|a floating-gate devices
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| 650 |
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4 |
|a optical sensing and memory
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| 700 |
1 |
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|a Sun, Yun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chen, Mao-Lin
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Zhi-Bo
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhu, Qian-Bing
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Bing-Wei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Zhao, Tian-Yang
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Chi
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Tan, Jun
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Qiu, Song
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Qing-Wen
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Han, Zheng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Wei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Cheng, Hui-Ming
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Sun, Dong-Ming
|e verfasserin
|4 aut
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| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 32(2020), 9 vom: 15. März, Seite e1907288
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
1 |
8 |
|g volume:32
|g year:2020
|g number:9
|g day:15
|g month:03
|g pages:e1907288
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| 856 |
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|u http://dx.doi.org/10.1002/adma.201907288
|3 Volltext
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|d 32
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