Ultrafast Electrochemical Synthesis of Defect-Free In2 Se3 Flakes for Large-Area Optoelectronics

Ultrafast Electrochemical Synthesis of Defect-Free In2 Se3 Flakes for Large-Area Optoelectronics

© 2020 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 32(2020), 8 vom: 26. Feb., Seite e1907244
1. Verfasser: Shi, Huanhuan (VerfasserIn)
Weitere Verfasser: Li, Mengmeng, Shaygan Nia, Ali, Wang, Mingchao, Park, SangWook, Zhang, Zhen, Lohe, Martin R, Yang, Sheng, Feng, Xinliang
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2020
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article 2D materials defect-free electrochemical exfoliation indium selenide large-area optoelectronics
Beschreibung
Zusammenfassung:© 2020 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Because of its thickness-dependent direct bandgap and exceptional optoelectronic properties, indium(III) selenide (In2 Se3 ) has emerged as an important semiconductor for electronics and optoelectronics. However, the scalable synthesis of defect-free In2 Se3 flakes remains a significant barrier for its practical applications. Here, a facile electrochemical strategy is presented for the ultrafast delamination of bulk layered In2 Se3 crystals in nonaqueous media, resulting in high-yield (83%) production of defect-free In2 Se3 flakes with large lateral size (up to 26 µm). The intercalation of tetrahexylammonium (THA+ ) ions mainly creates stage-3 intercalated compounds in which every three layers of In2 Se3 are occupied by one layer of THA molecules. The subsequent exfoliation leads to a majority of trilayer In2 Se3 nanosheets. As a proof of concept, solution-processed, large-area (400 µm × 20 µm) thin-film photodetectors embedded with the exfoliated In2 Se3 flakes reveal ultrafast response time with a rise and decay of 41 and 39 ms, respectively, and efficient responsivity (1 mA W-1 ). Such performance surpasses most of the state-of-the-art thin-film photodetectors based on transition metal dichalcogenides
Beschreibung:Date Revised 30.09.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201907244