|
|
|
|
| LEADER |
01000naa a22002652 4500 |
| 001 |
NLM304682683 |
| 003 |
DE-627 |
| 005 |
20231225115515.0 |
| 007 |
cr uuu---uuuuu |
| 008 |
231225s2020 xx |||||o 00| ||eng c |
| 024 |
7 |
|
|a 10.1002/adma.201906874
|2 doi
|
| 028 |
5 |
2 |
|a pubmed24n1015.xml
|
| 035 |
|
|
|a (DE-627)NLM304682683
|
| 035 |
|
|
|a (NLM)31867809
|
| 040 |
|
|
|a DE-627
|b ger
|c DE-627
|e rakwb
|
| 041 |
|
|
|a eng
|
| 100 |
1 |
|
|a Wen, Yao
|e verfasserin
|4 aut
|
| 245 |
1 |
0 |
|a Bridging the van der Waals Interface for Advanced Optoelectronic Devices
|
| 264 |
|
1 |
|c 2020
|
| 336 |
|
|
|a Text
|b txt
|2 rdacontent
|
| 337 |
|
|
|a ƒaComputermedien
|b c
|2 rdamedia
|
| 338 |
|
|
|a ƒa Online-Ressource
|b cr
|2 rdacarrier
|
| 500 |
|
|
|a Date Revised 30.09.2020
|
| 500 |
|
|
|a published: Print-Electronic
|
| 500 |
|
|
|a Citation Status PubMed-not-MEDLINE
|
| 520 |
|
|
|a © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
|
| 520 |
|
|
|a Van der Waals (vdW) heterostructures exhibit excellent optoelectronic properties and novel functionalities. However, their applicability is impeded due to the common issue of the tunneling barrier, which arises from the vdW gap; this significantly increases the injection resistance of the photoexcited carriers. Herein, a generic strategy is demonstrated to eliminate the vdW gap in a broad class of heterostructures. It is observed that the vdW gap in the interface is bridged via strong orbital hybridization between the interface dangling bonds of nonlayered chalcogenide semiconductors and the artificially induced vacancies of transition metal chalcogenides (TMDCs). The photoresponse times of bridged PbS/ReS2 , PbS/MoSe2 , and PbS/MoS2 are ≈30, 51, and 43 µs, respectively. The photon-triggered on/off ratio of the bridged PbS/MoS2 , ZnSe/MoS2 , and ZnTe/MoS2 heterostructures exceed 106 , 105 , and 105 , respectively. These are several orders of magnitude higher than common vdW heterostructures. The findings obtained in this study present a versatile strategy for overcoming the performance limitations of vdW heterostructures
|
| 650 |
|
4 |
|a Journal Article
|
| 650 |
|
4 |
|a artificial vacancies
|
| 650 |
|
4 |
|a bridged heterostructures
|
| 650 |
|
4 |
|a optoelectronic devices
|
| 650 |
|
4 |
|a orbital hybridization
|
| 650 |
|
4 |
|a vdW gap
|
| 700 |
1 |
|
|a He, Peng
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Yao, Yuyu
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Zhang, Yu
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Cheng, Ruiqing
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Yin, Lei
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Li, Ningning
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Li, Jie
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Wang, Junjun
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Wang, Zhenxing
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Liu, Chuansheng
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Fang, Xuan
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Jiang, Chao
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a Wei, Zhipeng
|e verfasserin
|4 aut
|
| 700 |
1 |
|
|a He, Jun
|e verfasserin
|4 aut
|
| 773 |
0 |
8 |
|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 32(2020), 7 vom: 06. Feb., Seite e1906874
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
|
| 773 |
1 |
8 |
|g volume:32
|g year:2020
|g number:7
|g day:06
|g month:02
|g pages:e1906874
|
| 856 |
4 |
0 |
|u http://dx.doi.org/10.1002/adma.201906874
|3 Volltext
|
| 912 |
|
|
|a GBV_USEFLAG_A
|
| 912 |
|
|
|a SYSFLAG_A
|
| 912 |
|
|
|a GBV_NLM
|
| 912 |
|
|
|a GBV_ILN_350
|
| 951 |
|
|
|a AR
|
| 952 |
|
|
|d 32
|j 2020
|e 7
|b 06
|c 02
|h e1906874
|