APA Zitierstil

Fei, F., Zhang, S., Zhang, M., Shah, S. A., Song, F., Wang, X., & Wang, B. (2020). The Material Efforts for Quantized Hall Devices Based on Topological Insulators. Advanced materials (Deerfield Beach, Fla.), 32(27), . https://doi.org/10.1002/adma.201904593

Chicago Zitierstil

Fei, Fucong, Shuai Zhang, Minhao Zhang, Syed Adil Shah, Fengqi Song, Xuefeng Wang, und Baigeng Wang. "The Material Efforts for Quantized Hall Devices Based on Topological Insulators." Advanced Materials (Deerfield Beach, Fla.) 32, no. 27 (2020). https://dx.doi.org/10.1002/adma.201904593.

MLA Zitierstil

Fei, Fucong, et al. "The Material Efforts for Quantized Hall Devices Based on Topological Insulators." Advanced Materials (Deerfield Beach, Fla.), vol. 32, no. 27, 2020.

Achtung: Diese Zitate sind unter Umständen nicht zu 100% korrekt.