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231225s2020 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201906374
|2 doi
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|a pubmed25n1013.xml
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|a eng
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| 100 |
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|a Hui, Wei
|e verfasserin
|4 aut
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|a Red-Carbon-Quantum-Dot-Doped SnO2 Composite with Enhanced Electron Mobility for Efficient and Stable Perovskite Solar Cells
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|c 2020
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 29.01.2020
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a An efficient electron transport layer (ETL) plays a key role in promoting carrier separation and electron extraction in planar perovskite solar cells (PSCs). An effective composite ETL is fabricated using carboxylic-acid- and hydroxyl-rich red-carbon quantum dots (RCQs) to dope low-temperature solution-processed SnO2 , which dramatically increases its electron mobility by ≈20 times from 9.32 × 10-4 to 1.73 × 10-2 cm2 V-1 s-1 . The mobility achieved is one of the highest reported electron mobilities for modified SnO2 . Fabricated planar PSCs based on this novel SnO2 ETL demonstrate an outstanding improvement in efficiency from 19.15% for PSCs without RCQs up to 22.77% and have enhanced long-term stability against humidity, preserving over 95% of the initial efficiency after 1000 h under 40-60% humidity at 25 °C. These significant achievements are solely attributed to the excellent electron mobility of the novel ETL, which is also proven to help the passivation of traps/defects at the ETL/perovskite interface and to promote the formation of highly crystallized perovskite, with an enhanced phase purity and uniformity over a large area. These results demonstrate that inexpensive RCQs are simple but excellent additives for producing efficient ETLs in stable high-performance PSCs as well as other perovskite-based optoelectronics
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|a Journal Article
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|a SnO2
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|a electron transport layers
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|a planar perovskite solar cells
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|a red-carbon quantum dots
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|a synchrotron-based GIXRD
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| 700 |
1 |
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|a Yang, Yingguo
|e verfasserin
|4 aut
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1 |
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|a Xu, Quan
|e verfasserin
|4 aut
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1 |
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|a Gu, Hao
|e verfasserin
|4 aut
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1 |
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|a Feng, Shanglei
|e verfasserin
|4 aut
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1 |
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|a Su, Zhenhuang
|e verfasserin
|4 aut
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1 |
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|a Zhang, Miaoran
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Jiaou
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Li, Xiaodong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Fang, Junfeng
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Xia, Fei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Xia, Yingdong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Chen, Yonghua
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Gao, Xingyu
|e verfasserin
|4 aut
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| 700 |
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|a Huang, Wei
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 32(2020), 4 vom: 15. Jan., Seite e1906374
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnas
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| 773 |
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|g volume:32
|g year:2020
|g number:4
|g day:15
|g month:01
|g pages:e1906374
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|u http://dx.doi.org/10.1002/adma.201906374
|3 Volltext
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