A New Opportunity for 2D van der Waals Heterostructures Making Steep-Slope Transistors

A New Opportunity for 2D van der Waals Heterostructures : Making Steep-Slope Transistors

© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Deerfield Beach, Fla.). - 1998. - 32(2020), 2 vom: 22. Jan., Seite e1906000
1. Verfasser: Lyu, Juan (VerfasserIn)
Weitere Verfasser: Pei, Jing, Guo, Yuzheng, Gong, Jian, Li, Huanglong
Format: Online-Aufsatz
Sprache:English
Veröffentlicht: 2020
Zugriff auf das übergeordnete Werk:Advanced materials (Deerfield Beach, Fla.)
Schlagworte:Journal Article 2D materials DFT-NEGF cold sources steep-slope transistors van der Waals heterostructures
Beschreibung
Zusammenfassung:© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
The use of a foreign metallic cold source (CS) has recently been proposed as a promising approach toward the steep-slope field-effect-transistor (FET). In addition to the selection of source material with desired density of states-energy relation (D(E)), engineering the source:channel interface for gate-tunable channel-barrier is crucial to CS-FETs. However, conventional metal:semiconductor (MS) interfaces generally suffer from strong Fermi-level pinning due to the inevitable chemical disorder and defect-induced gap states, precluding the gate tunability of the barriers. By comprehensive materials and device modeling at the atomic scale, it is reported that 2D van der Waals (vdW) MS interfaces, with their atomic sharpness and cleanness, can be considered as general ingredients for CS-FETs. As test cases, InSe-based n-type FETs are studied. It is found that graphene can be spontaneously p-type doped along with slightly opened bandgap around the Dirac-point by interfacing with InSe, resulting in superexponentially decaying hot carrier density with increasing n-type channel-barrier. Moreover, the D(E) relations suggest that 2D transition-metal dichalcogenides and 2D transition-metal carbides are a rich library of CS materials. Graphene, Cd3 C2 , T-VTe2 , H-VTe2 , and H-TaTe2 CSs lead to subthreshold swing below 60 mV dec-1 . This work broadens the application potentials of 2D vdW MS heterostructures and serves as a springboard for more studies on low-power electronics based on 2D materials
Beschreibung:Date Completed 17.01.2020
Date Revised 01.10.2020
published: Print-Electronic
Citation Status PubMed-not-MEDLINE
ISSN:1521-4095
DOI:10.1002/adma.201906000