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231225s2020 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201905504
|2 doi
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|a pubmed24n1011.xml
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|a (DE-627)NLM30339398X
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|a (NLM)31736228
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|a DE-627
|b ger
|c DE-627
|e rakwb
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|a eng
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| 100 |
1 |
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|a Ares, Pablo
|e verfasserin
|4 aut
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| 245 |
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|a Piezoelectricity in Monolayer Hexagonal Boron Nitride
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|c 2020
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
|b cr
|2 rdacarrier
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|a Date Completed 07.01.2020
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2019 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a 2D hexagonal boron nitride (hBN) is a wide-bandgap van der Waals crystal with a unique combination of properties, including exceptional strength, large oxidation resistance at high temperatures, and optical functionalities. Furthermore, in recent years hBN crystals have become the material of choice for encapsulating other 2D crystals in a variety of technological applications, from optoelectronic and tunneling devices to composites. Monolayer hBN, which has no center of symmetry, is predicted to exhibit piezoelectric properties, yet experimental evidence is lacking. Here, by using electrostatic force microscopy, this effect is observed as a strain-induced change in the local electric field around bubbles and creases, in agreement with theoretical calculations. No piezoelectricity is found in bilayer and bulk hBN, where the center of symmetry is restored. These results add piezoelectricity to the known properties of monolayer hBN, which makes it a desirable candidate for novel electromechanical and stretchable optoelectronic devices, and pave a way to control the local electric field and carrier concentration in van der Waals heterostructures via strain. The experimental approach used here also shows a way to investigate the piezoelectric properties of other materials on the nanoscale by using electrostatic scanning probe techniques
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|a Journal Article
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|a 2D materials
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|a electrostatic force microscopy
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|a hexagonal boron nitride
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|a piezoelectricity
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1 |
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|a Cea, Tommaso
|e verfasserin
|4 aut
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1 |
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|a Holwill, Matthew
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Yi Bo
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Roldán, Rafael
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Guinea, Francisco
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Andreeva, Daria V
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Fumagalli, Laura
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Novoselov, Konstantin S
|e verfasserin
|4 aut
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| 700 |
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|a Woods, Colin R
|e verfasserin
|4 aut
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| 773 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 32(2020), 1 vom: 05. Jan., Seite e1905504
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
1 |
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|g volume:32
|g year:2020
|g number:1
|g day:05
|g month:01
|g pages:e1905504
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|u http://dx.doi.org/10.1002/adma.201905504
|3 Volltext
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