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231225s2019 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201905436
|2 doi
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|a pubmed24n1008.xml
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|a (NLM)31643113
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|a DE-627
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|e rakwb
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|a eng
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| 100 |
1 |
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|a Liu, Shuhai
|e verfasserin
|4 aut
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| 245 |
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|a Piezotronic Tunneling Junction Gated by Mechanical Stimuli
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|c 2019
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
|b c
|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Completed 18.12.2019
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|a Date Revised 30.09.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Tunneling junction is used in many devices such as high-frequency oscillators, nonvolatile memories, and magnetic field sensors. In these devices, modulation on the barrier width and/or height is usually realized by electric field or magnetic field. Here, a new piezotronic tunneling junction (PTJ) principle, in which the quantum tunneling is controlled/tuned by externally applied mechanical stimuli, is proposed. In these metal/insulator/piezoelectric semiconductor PTJs, such as Pt/Al2 O3 /p-GaN, the height and the width of the tunneling barriers can be mechanically modulated via the piezotronic effect. The tunneling current characteristics of PTJs exhibit critical behavior as a function of external mechanical stimuli, which results in high sensitivity (≈5.59 mV MPa-1 ), giant switching (>105 ), and fast response (≈4.38 ms). Moreover, the mechanical controlling of tunneling transport in PTJs with various thickness of Al2 O3 is systematically investigated. The high performance observed with these metal/insulator/piezoelectric semiconductor PTJs suggest their great potential in electromechanical technology. This study not only demonstrates dynamic mechanical controlling of quantum tunneling, but also paves a way for adaptive interaction between quantum tunneling and mechanical stimuli, with potential applications in the field of ultrasensitive press sensor, human-machine interface, and artificial intelligence
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|a Journal Article
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|a mechanical gating
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|a piezoelectric effect
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|a piezotronic effect
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|a quantum tunneling
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|a tunneling junctions
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|a Wang, Longfei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Feng, Xiaolong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Liu, Jinmei
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Qin, Yong
|e verfasserin
|4 aut
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| 700 |
1 |
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|a Wang, Zhong Lin
|e verfasserin
|4 aut
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| 773 |
0 |
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 31(2019), 51 vom: 02. Dez., Seite e1905436
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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| 773 |
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|g volume:31
|g year:2019
|g number:51
|g day:02
|g month:12
|g pages:e1905436
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|u http://dx.doi.org/10.1002/adma.201905436
|3 Volltext
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