APA Zitierstil

Guo, J., Wang, L., Yu, Y., Wang, P., Huang, Y., & Duan, X. (2019). SnSe/MoS2 van der Waals Heterostructure Junction Field-Effect Transistors with Nearly Ideal Subthreshold Slope. Advanced materials (Deerfield Beach, Fla.), 31(49), . https://doi.org/10.1002/adma.201902962

Chicago Zitierstil

Guo, Jian, Laiyuan Wang, Yiwei Yu, Peiqi Wang, Yu Huang, und Xiangfeng Duan. "SnSe/MoS2 Van Der Waals Heterostructure Junction Field-Effect Transistors with Nearly Ideal Subthreshold Slope." Advanced Materials (Deerfield Beach, Fla.) 31, no. 49 (2019). https://dx.doi.org/10.1002/adma.201902962.

MLA Zitierstil

Guo, Jian, et al. "SnSe/MoS2 Van Der Waals Heterostructure Junction Field-Effect Transistors with Nearly Ideal Subthreshold Slope." Advanced Materials (Deerfield Beach, Fla.), vol. 31, no. 49, 2019.