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231225s2019 xx |||||o 00| ||eng c |
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|a 10.1002/adma.201905079
|2 doi
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|a pubmed24n1006.xml
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|a DE-627
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|a eng
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|a Lin, Richeng
|e verfasserin
|4 aut
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|a All-Inorganic CsCu2 I3 Single Crystal with High-PLQY (≈15.7%) Intrinsic White-Light Emission via Strongly Localized 1D Excitonic Recombination
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|c 2019
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|a Text
|b txt
|2 rdacontent
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|a ƒaComputermedien
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|2 rdamedia
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|a ƒa Online-Ressource
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|a Date Completed 13.11.2019
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|a Date Revised 01.10.2020
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|a published: Print-Electronic
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|a Citation Status PubMed-not-MEDLINE
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|a © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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|a Energy-saving white lighting from the efficient intrinsic emission of semiconductors is considered as a next-generation lighting source. Currently, white-light emission can be composited with a blue light-emitting diode and yellow phosphor. However, this solution has an inevitable light loss, which makes the improvement of the energy utilization efficiency more difficult. To deal with this problem, intrinsic white-light emission (IWE) in a single solid material gives a possibility. Here, an all-inorganic lead-free CsCu2 I3 perovskite single crystal (SC) with stable and high photoluminescence quantum yield (≈15.7%) IWE through strongly localized 1D exciton recombination is synthesized. In the CsCu2 I3 , the Cu-I octahedron, which provides most of electron states, is isolated by Cs atoms in two directions to form a 1D electronic structure, resulting a high radiation recombination rate of excitons. With this electronic structure design, the CsCu2 I3 SCs have great potential in energy-saving white lighting
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|a Journal Article
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|a 1D localization
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|a all-inorganic perovskites
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|a excitonic recombination
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|a lead free
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|a white lighting
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|a Guo, Quanlin
|e verfasserin
|4 aut
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|a Zhu, Qun
|e verfasserin
|4 aut
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|a Zhu, Yanming
|e verfasserin
|4 aut
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|a Zheng, Wei
|e verfasserin
|4 aut
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|a Huang, Feng
|e verfasserin
|4 aut
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|i Enthalten in
|t Advanced materials (Deerfield Beach, Fla.)
|d 1998
|g 31(2019), 46 vom: 20. Nov., Seite e1905079
|w (DE-627)NLM098206397
|x 1521-4095
|7 nnns
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|g volume:31
|g year:2019
|g number:46
|g day:20
|g month:11
|g pages:e1905079
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|u http://dx.doi.org/10.1002/adma.201905079
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